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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon

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Abstract

The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed on a crystal Si (c-Si) layer on the practical implementation and specific features of the epitaxial growth of GaAs layers by metal–organic chemical vapor deposition. It is for the first time shown that the low-temperature growth of high-crystal-quality epitaxial GaAs films can be implemented due to the use of compliant SL/proto-Si substrates. The introduction of a SL into the composition of a compliant substrate in addition to proto-Si makes it possible to neutralize a number of negative effects of low-temperature growth, to reduce the level of stresses in the epitaxial layer, to protect it from self-doping with Si atoms, to reduce the number of technological operations of the growth of transition buffer layers, and to improve the structural and morphological characteristics of the epitaxial layer.

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ACKNOWLEDGMENTS

We thank the Karlsruhe Nano Micro Facility (KNMF, www.kit.edu/knmf) of the Forschungszentrum Karlsruhe for providing access to the equipment at their laboratories.

Funding

The study was supported by the Russian Science Foundation, project no. 19-72-10007.

The part of the study performed by P.V. Seredin was supported by the Ministry of Science and Higher Education of the Russian Federation in accordance with the government order to institutes of higher education, project no. FZGU-2020-0036.

The technological studies of MOCVD epitaxial processes were conducted in accordance with the planned state program of Ioffe Institute.

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Authors and Affiliations

  1. Voronezh State University, 394018, Voronezh, Russia

    P. V. Seredin, D. L. Goloshchapov & Yu. Yu. Khudyakov

  2. Ural Federal University, 620002, Yekaterinburg, Russia

    P. V. Seredin

  3. Ioffe Institute, 194021, St. Petersburg, Russia

    I. N. Arsentyev, D. N. Nikolaev, N. A. Pikhtin & S. O. Slipchenko

  4. Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany

    Harald Leiste

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  1. P. V. Seredin
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  2. D. L. Goloshchapov
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  3. Yu. Yu. Khudyakov
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  4. I. N. Arsentyev
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  5. D. N. Nikolaev
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  6. N. A. Pikhtin
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  7. S. O. Slipchenko
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Correspondence to P. V. Seredin or I. N. Arsentyev.

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Translated by E. Smorgonskaya

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Seredin, P.V., Goloshchapov, D.L., Khudyakov, Y.Y. et al. Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon. Semiconductors 55, 122–131 (2021). https://doi.org/10.1134/S1063782621010140

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