Abstract
An insulating-metallic transition mediated by substitutional atoms is predicted in a series of two-dimensional carbon-based structures. Introducing Si atoms in selected sites of tetrahexcarbon [B. Ram and H. Mizuseki, Carbon 137, 266 (2018)] according to rational chemical rules, metallicity by trivial band inversion without a band gap opening is induced. Additional substitution of the remaining C atoms by BN dimers introduces no changes in the metallic properties. A series of isomorphous two-dimensional materials with isoelectronic structures derived by exchanging group IV elements exhibiting various band gaps is obtained. Dynamical stability is verified with a phonon analysis and beyond the harmonic approximation with molecular dynamics up to room temperature. The semimetallic compounds have well-nested pockets of carriers and are good candidates for the formation of an excitonic insulator.
- Received 20 August 2020
- Revised 17 October 2020
- Accepted 14 January 2021
DOI:https://doi.org/10.1103/PhysRevMaterials.5.014006
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