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Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment

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Abstract

In this work, we reported improved resistive switching (RS) of SnO2-based resistive random access memory (RRAM) devices according to the post microwave treatment (MWT), working pressures (WP), and the electrode. As a result, as the deposition pressure increased, the operational current of all the devices became commonly lower, and when comparing SnO2 RRAM devices, the optimal RS characteristics are obtained from the sample with Ag top-electrode deposited at WP of 10 mTorr and after the MWT process. The filament was also investigated, for the sample deposited at 5 mTorr, the diameter of the filament was wider in both the high resistive state and the low resistive state as a result of increasing the number of cycles. As a result, the larger the diameter of the filament, the longer the time for the filament formation and rupture was found.

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Acknowledgements

M.J. Yun, D. Bea, J. Jung contributed equally to this work. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. NRF-2020R1F1A1048423) and by Korea Institute for Advancement of Technology (KIAT) Grant funded by the Korea Government (MOTIE) (P0012451, The Competency Development Program for Industry Specialist).

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Authors and Affiliations

  1. Department of Electrical Engineering, and Convergence Engineering for Intelligent Drone, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul, 05006, Korea

    Min Ju Yun, Dongju Bea, Jinsu Jung & Hee-Dong Kim

  2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA

    Kyeong Heon Kim

  3. Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea

    Sungjun Kim

  4. School of Convergence Electronic Engineering, Gyeongnam National University of Science and Technology, Jinju-si, 52725, Korea

    Kyeong Heon Kim

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  1. Min Ju Yun
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Correspondence to Hee-Dong Kim.

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Yun, M.J., Kim, K.H., Bea, D. et al. Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment. J. Electr. Eng. Technol. 16, 1011–1017 (2021). https://doi.org/10.1007/s42835-020-00633-0

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  • DOI: https://doi.org/10.1007/s42835-020-00633-0

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