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Active Tuning from Narrowband to Broadband Absorbers Using a Sub-wavelength VO2 Embedded Layer

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A Correction to this article was published on 04 February 2021

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Abstract

Metamaterial perfect absorbers (MPAs) with dynamic thermal tuning features are able to control the absorption performance of the resonances, providing diverse applications spanning from optical switches and filters to modulators. In this paper, we propose an MPA with diverse functionalities enabled by vanadium dioxide (VO2) embedded in a metal-dielectric plasmonic structure. For the initial design purpose, a silicon (Si) nanograting on a silver (Ag) mirror is proposed to have multiple resonant responses in the near infrared (NIR) region. Then, the insertion of a thin VO2 layer at the right position enables the design to act as an on/off switch and resonance tuner. In the insulator phase of VO2, in which the permittivity data of VO2 is similar to that of Si, a double strong resonant behavior is achieved within the NIR region. By increasing the temperature, the state of VO2 transforms from insulator to metallic so that the absorption bands turn into three distinct resonant peaks with close spectral positions. Upon this transformation, a new resonance emerges and the existing resonance features experience blue/red shifts in the spectral domain. The superposition of these peaks makes the overall absorption bandwidth broad. Although Si has a small thermo-optic coefficient, owing to strong light confinement in the ultrasmall gaps, a substantial tuning can be achieved within the Si nanogratings. Therefore, the proposed hybrid design can provide multi-resonance tunable features to cover a broad range and can be a promising strategy for the design of linearly thermal-tunable and broadband MPAs. Owing to the proposed double tuning feature, the resonance wavelengths exhibits great sensitivity to temperature, covering a broad wavelength range\(.\) Overall, the proposed design strategy demonstrates diverse functionalities enabled by the integration of a thin VO2 layer with plasmonic absorbers.

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Funding

One of the authors (A.E.S.) received partial financial support by Narodowe Centrum Nauki, Grant No. ~2015/17/B/ST3/00118 and TUBITAK under program 2221.

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Authors and Affiliations

  1. Department of Physics, Bilkent University, Ankara, 06800, Turkey

    Ataollah Kalantari Osgouei & Ekmel Ozbay

  2. NANOTAM- Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey

    Ataollah Kalantari Osgouei, Hodjat Hajian, Bahram Khalichi, Andriy E. Serebryannikov, Amir Ghobadi & Ekmel Ozbay

  3. Department of Electrical and Electronics Engineering, Bilkent University, Ankara, 06800, Turkey

    Bahram Khalichi, Amir Ghobadi & Ekmel Ozbay

  4. Faculty of Physics, Adam Mickiewicz University, 61-614, Poznan, Poland

    Andriy E. Serebryannikov

  5. UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, Turkey

    Ekmel Ozbay

Authors
  1. Ataollah Kalantari Osgouei
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  2. Hodjat Hajian
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  3. Bahram Khalichi
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  4. Andriy E. Serebryannikov
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  5. Amir Ghobadi
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Contributions

First author (A.K.O.) carried out the modeling, design, and simulations. H.H. and B.K. and A.E.S. and A.G. assisted in theoretical review and simulations. E.O. supervised the study. All the authors contributed in the results, discussions, and paper writing.

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Correspondence to Ataollah Kalantari Osgouei.

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The original online version of this article was revised: "The name of the fourth author is written reversely. The complete name of the fourth author is as follows: “Andriy E.” as the first name, while “Serebryannikov” is his last name."

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Kalantari Osgouei, A., Hajian, H., Khalichi, B. et al. Active Tuning from Narrowband to Broadband Absorbers Using a Sub-wavelength VO2 Embedded Layer. Plasmonics 16, 1013–1021 (2021). https://doi.org/10.1007/s11468-020-01370-w

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  • DOI: https://doi.org/10.1007/s11468-020-01370-w

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