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Improving Short Channel Effects by Reformed U-Channel UTBB FD SOI MOSFET: A Feasible Scaled Device

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Abstract

U-channel ultra-thin body and buried oxide (U-UTBB) Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) present unique features which are simple, high-performance, area efficient, and compatible with CMOS technology. In this paper, we present the electrical characteristics of a U-UTBB SOI MOSFET with reforming the U-channel. This proposed symmetrical and planar device is initiated by removing two spacers around the recessed metal gate in the U-channel MOSFET. Hence, it causes to increase the overall channel length at the firm metal gate space along with saving area. As it has confirmed by two-dimensional and two-carrier device simulation results, the proposed structure which is termed Reformed U-UTBB (R-U-UTBB) fully depleted SOI MOSFET exhibits advantages in the device performance focusing on short channel effects (SCEs) factors including the sub-threshold slope, the drain induced barrier lowering (DIBL), and the threshold voltage roll-off. Leakage current and on-to-off current ratio are studied as well which all of them show the superiority of proposed structure compared with the U-UTBB FD SOI MOSFET and a conventional UTBB (C-UTBB) FD SOI MOSFET. In addition, the effects of process-induced variations have investigated by varying buried oxide thickness, top silicon thickness, channel thickness, substrate doping, and oxide thickness on threshold voltage, sub-threshold slope, and drain induced barrier lowering (DIBL).

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Data Availability

The data that support the findings of this study are openly available at http:// www.silvaco.com, reference number [31].

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Authors and Affiliations

  1. Electrical Engineering Department, Semnan University, Semnan, Iran

    Moslem Ghassemi & Ali A. Orouji

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  1. Moslem Ghassemi
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  2. Ali A. Orouji
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Contributions

Conceptualization, Methodology, Formal analysis and investigation, and Writing - original draft preparation: [Moslem Ghassemi].

Writing - review and editing, Funding acquisition, Resources, and Supervision: [Ali A. Orouji].

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Correspondence to Ali A. Orouji.

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Ghassemi, M., Orouji, A.A. Improving Short Channel Effects by Reformed U-Channel UTBB FD SOI MOSFET: A Feasible Scaled Device. Silicon 14, 1013–1022 (2022). https://doi.org/10.1007/s12633-020-00861-z

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