On the Photoresponse Kinetics and Amplitude of Silicon Photoelectric Multipliers

Abstract—The influence of the supply voltage and temperature on the characteristics of the photoresponse of silicon photoelectric multipliers has not been adequately studied. In this study, the influence of these factors on the time characteristics of the photoresponse of silicon photoelectric multipliers is investigated. A block diagram of the experimental system is presented. In the system, the optical radiation source is a light-emitting diode, and photoresponse recording is provided by a specialized hardware–software complex. The results of studies of the effect of the supply voltage and temperature on the photoresponse kinetics and amplitude of silicon photoelectric multipliers, fabricated on the basis of n⁺–n–p⁺- and p⁺–p–n⁺ structures, upon pulsed optical excitation at a wavelength of 630 nm are reported. It is established that, upon the exposure of silicon photoelectric multipliers to optical pulses identical in duration, wavelength, and energy at the same temperature and overvoltage, the photoresponse duration is longer for silicon photoelectric multipliers based on the p⁺–p–n⁺ structure. It is found that the photoresponse rise time is associated with the photocurrent amplification coefficient and the photosignal pulse relaxation time is associated with the series resistance of silicon photoelectric multipliers. The photoresponse rise time is longer for silicon photoelectric multipliers with a larger photocurrent-amplification coefficient. A longer photoresponse decay time is inherent in silicon photoelectric multipliers with higher series resistance.