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A novel design of Rogers RT/duroid 5880 material based two turn antenna for intracranial pressure monitoring

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Abstract

Intracranial pressure (ICP) monitoring is proved to be a lifesaving tool for the person suffering from traumatic and other brain diseases. The need to comprehend and control intracranial pressure (ICP) is required for remedies in clinical neurosurgery, nervous system science and crisis medication. It gives detailed status about the brain, blood and cerebrospinal fluid. Non-invasive method of measuring ICP is thriving in recent times and more research is cornered towards it. In this paper, for ICP monitoring a two-turn loop antenna model is proposed. The observation of ICP is done at Industrial Scientific Medical band (ISM) of 2.45 GHz and the antenna is designed using Rogers RT/duroid 5880 material, simulated using High-Frequency Structure Simulator. The simulation results prove that two turn loop antenna is better for wireless pressure monitoring at 1-m distance. The high link power efficiency has been achieved at low Specific Absorption Rate. The pressure changes are measured from both directions up to down and down to up paving way for accurate medical aid.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, IFET College of Engineering, Villupuram, Tamilnadu, India

    Ananth Kumar Tamilarasan & Suresh Kumar Krishnadhas

  2. Department of Electronics and Communication Engineering, National Institute of Technology Puducherry, Puducherry, India

    Sundaresan Sabapathy

  3. Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, Tamilnadu, India

    Arun Samuel Thankamony Sarasam

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  1. Ananth Kumar Tamilarasan
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  2. Suresh Kumar Krishnadhas
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  3. Sundaresan Sabapathy
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  4. Arun Samuel Thankamony Sarasam
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Correspondence to Ananth Kumar Tamilarasan.

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Tamilarasan, A.K., Krishnadhas, S.K., Sabapathy, S. et al. A novel design of Rogers RT/duroid 5880 material based two turn antenna for intracranial pressure monitoring. Microsyst Technol 27, 3579–3588 (2021). https://doi.org/10.1007/s00542-020-05122-y

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  • DOI: https://doi.org/10.1007/s00542-020-05122-y

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