Skip to main content
Log in

Optical and structural properties of aluminium nitride thin-films synthesized by DC-magnetron sputtering technique at different sputtering pressures

  • Technical Paper
  • Published:
Microsystem Technologies Aims and scope Submit manuscript

Abstract

Aluminium nitride thin-films (AlN) were fabricated by a DC-magnetron sputtering technique at different background pressures while maintaining the same deposition conditions. The influence of varying sputtering pressure on the structural and optical properties of AlN thin-films was investigated. XRD measurements were utilized to determine the structural properties of the deposited AlN thin-films such as strain, stress, crystallite size, and crystalline density. They confirmed the hexagonal wurtzite structure of AlN thin-films and the increase in the degree of c-axis orientation as the sputtering pressure decreases. The optical properties of AlN thin-films, deposited on glass substrates, were analyzed by means of transmittance and absorption spectra using a UV–Vis spectrophotometer. The results have shown that an increase in the sputtering pressure leads to a shift of the threshold transmittance towards the lower wavelength range. This results in widening the optical bandgap and decreasing both the refractive index and the extinction coefficient. The dispersion of the refractive index is investigated according to the Wemple–DiDomenico single oscillator model and the model parameters (such as effective single oscillator \({E}_{0}\), dispersion energy \({E}_{d}\), zero-frequency dielectric constant \({\varepsilon }_{0}\) and optical moments) were estimated accordingly.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12

Similar content being viewed by others

References

  • Ababneh A, Schmid U, Hernando J, Sánchez-Rojas JL, Seidel H (2010) The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films. Mater Sci Eng, B 172(3):253–258

    Google Scholar 

  • Ababneh A, Albataineh Z, Dagamseh AMK, Al-kofahi IS, Schäfer B, Zengerle T, Seidel H (2020) Optical characterization of sputtered aluminum nitride thin films–correlating refractive index with degree of c-axis orientation. Thin Solid Films 693:137701

    Google Scholar 

  • Ahmad AA, Alsaad AM, Al-Bataineh QM, Al-Naafa MA (2018) Optical and structural investigations of dip-synthesized boron-doped ZnO-seeded platforms for ZnO nanostructures. Appl Phys A 124(6):458

    Google Scholar 

  • Akiyama M, Morofuji Y, Kamohara T, Nishikubo K, Tsubai M, Fukuda O, Ueno N (2006) Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films. J Appl Phys 100(11):114318

    Google Scholar 

  • Akl AA, Hassanien AS (2015) Microstructure and crystal imperfections of nanosized CdSxSe1− X thermally evaporated thin films. Superlattices Microstruct 85:67–81

    Google Scholar 

  • Al-Bataineh QM, Alsaad AM, Ahmad AA, Telfah A (2020) A novel optical model of the experimental transmission spectra of nanocomposite PVC-PS hybrid thin films doped with silica nanoparticles. Heliyon 6(6):e04177

    Google Scholar 

  • Alsaad AM, Al-Bataineh QM, Qattan IA, Ahmad AA, Ababneh A, Albataineh Z, Telfah A (2020) Measurement and ab initio investigation of structural, electronic, optical, and mechanical properties of sputtered aluminum nitride thin films. Front Phys 8:115

    Google Scholar 

  • Aly KA, Amer HH, Dahshan A (2009) Optical constants of thermally evaporated Se–Sb–Te films using only their transmission spectra. Mater Chem Phys 113(2–3):690–695

    Google Scholar 

  • Ambacher O (1998) Growth and applications of group III-nitrides. J Phys D Appl Phys 31(20):2653

    Google Scholar 

  • Badran HA (2012) Study on optical constants and refractive index dispersion of neutral red doped polymer film. Am Jo Appl Sci 9(2):250

    Google Scholar 

  • Cullity BD (1978) Elements of X-ray diffraction. Addison, Wesley Mass

    Google Scholar 

  • Dahshan A, Amer HH, Aly KA (2008) Compositional dependence of the optical constants of amorphous GexAs20Se80− x thin films. J Phys D Appl Phys 41(21):215401

    Google Scholar 

  • Dawber M, Rabe KM, Scott JF (2005) Physics of thin-film ferroelectric oxides. Rev Mod Phys 77(4):1083

    Google Scholar 

  • Emam-Ismail M, El-Hagary M, Shaaban ER, Al-Hedeib AM (2012) Microstructure and optical studies of electron beam evaporated ZnSe1− xTex nanocrystalline thin films. J Alloy Compd 532:16–24

    Google Scholar 

  • Engelmark F, Westlinder J, Iriarte GF, Katardjiev IV, Olsson J (2003) Electrical characterization of AlN MIS and MIM structures. IEEE Trans Electron Dev 50(5):1214–1219

    Google Scholar 

  • Farag AAM, Ashery A, Shenashen MA (2012) Optical absorption and spectrophotometric studies on the optical constants and dielectric of poly (o-toluidine)(POT) films grown by spin coating deposition. Phys B 407(13):2404–2411

    Google Scholar 

  • Fasasi AY, Osagie E, Pelemo D, Obiajunwa E, Ajenifuja E, Ajao J, Adeoye AE (2018) Effect of precursor solvents on the optical properties of copper oxide thin films deposited using spray pyrolysis for optoelectronic applications. Am J Mater Synth Process 3(2):12–22

    Google Scholar 

  • Fu DW, Zhang W, Cai HL, Ge JZ, Zhang Y, Xiong RG (2011) Diisopropylammonium chloride: a ferroelectric organic salt with a high phase transition temperature and practical utilization level of spontaneous polarization. Adv Mater 23(47):5658–5662

    Google Scholar 

  • Ghosh S, Piazza G (2013) Photonic microdisk resonators in aluminum nitride. Appl Phys 113:016101. https://doi.org/10.1063/1.4772601

    Article  Google Scholar 

  • Gunthner S, Egretzberger M, Kugi A, Kapser K, Hartmann B, Schmid U, Seidel H (2006) Compensation of parasitic effects for a silicon tuning fork gyroscope. IEEE Sens J 6(3):596–604

    Google Scholar 

  • Hassanien AS (2016) Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd50S50− xSex thin films. J Alloy Compd 671:566–578

    Google Scholar 

  • Hassanien AS, Akl AA (2015) Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd50S50− xSex thin films. J Alloy Compd 648:280–290

    Google Scholar 

  • Horiuchi S, Tokunaga Y, Giovannetti G, Picozzi S, Itoh H, Shimano R, Tokura Y (2010) Above-room-temperature ferroelectricity in a single-component molecular crystal. Nature 463(7282):789–792

    Google Scholar 

  • Ingrosso I, Petroni S, Altamura D, De Vittorio M, Combi C, Passaseo A (2007) Fabrication of AlN/Si SAW delay lines with very low RF signal noise. Microelectron Eng 84(5–8):1320–1324

    Google Scholar 

  • Jona F, Shirane G (1962) Ferroelectric crystals, international series of monographs on solid state physics. Pergamon Press, Oxford

    Google Scholar 

  • Jundale D, Pawar S, Chougule M, Godse P, Patil S, Raut B, Patil V (2011) Nanocrystalline CuO thin films for H2S monitoring: microstructural and optoelectronic characterization. J Sens Technol 1:36–46

    Google Scholar 

  • Kar JP, Bose G, Tuli S (2005) Influence of rapid thermal annealing on morphological and electrical properties of RF sputtered AlN films. Mater Sci Semicond Process 8(6):646–651

    Google Scholar 

  • Kipshidze G, Kuryatkov V, Zhu K, Borisov B, Holtz M, Nikishin S, Temkin H (2003) AlN/AlGaInN superlattice light-emitting diodes at 280 nm. J Appl Phys 93(3):1363–1366

    Google Scholar 

  • Lu H, Li T, Poddar S, Goit O, Lipatov A, Sinitskii A, Gruverman A (2015) Statics and dynamics of ferroelectric domains in diisopropylammonium bromide. Adv Mater 27(47):7832–7838

    Google Scholar 

  • Lu TJ, Fanto M, Choi H, Thomas P, Steidle J, Mouradian S, Kim J (2018) Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum. Opt Express 26(9):11147–11160

    Google Scholar 

  • MacKenzie JD, Abernathy CR, Pearton SJ, Krishnamoorthy V, Bharatan S, Jones KS, Wilson RG (1995) Growth of AlN by metalorganic molecular beam epitaxy. Appl Phys Lett 67(2):253–255

    Google Scholar 

  • Manifacier JC, Gasiot J, Fillard JP (1976) A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film. J Phys E: Sci Instrum 9(11):1002

    Google Scholar 

  • Marzencki M, Ammar Y, Basrour S (2008) Integrated power harvesting system including a MEMS generator and a power management circuit. Sens Actuators A 145:363–370

    Google Scholar 

  • Nishida T, Makimoto T, Saito H, Ban T (2004) AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates. Appl Phys Lett 84(6):1002–1003

    Google Scholar 

  • Okutan M, San SE, Köysal O, Yakuphanoglu F (2005) Investigation of refractive index dispersion and electrical properties in carbon nano-balls’ doped nematic liquid crystals. Phys B 362(1–4):180–186

    Google Scholar 

  • Piazza G, Pisano AP (2007) Two-port stacked piezoelectric aluminum nitride contour-mode resonant MEMS. Sens Actuators A 136(2):638–645

    Google Scholar 

  • Pielaszek R (2003) Diffraction studies of microstructure of nanocrystals exposed to high pressure. Doctoral dissertation, Ph. D. thesis, Warsaw University, Department of Physics, Warsaw, Poland)

  • Rodriguez-Clemente R, Aspar B, Azema N, Armas B, Combescure C, Durand J, Figueras A (1993) Morphological properties of chemical vapour deposited AlN films. J Cryst Growth 133(1–2):59–70

    Google Scholar 

  • Scott JF (2007) Applications of modern ferroelectrics. Science 315(5814):954–959

    Google Scholar 

  • Shull CG (1946) The determination of X-ray diffraction line widths. Phys Rev 70(9–10):679

    Google Scholar 

  • Solliard C, Flueli M (1985) Surface stress and size effect on the lattice parameter in small particles of gold and platinum. Surf Sci 156:487–494

    Google Scholar 

  • Spitzer WG, Fan HY (1957) Determination of optical constants and carrier effective mass of semiconductors. Phys Rev 106(5):882

    Google Scholar 

  • Sun C, Liu X, Xiong B, Wang L, Hao Z, Wang J, Wei T (2017) Microwave Photonic devices based on high-Q AlN microring resonators. In: 2017 Asia Communications and Photonics Conference (ACP) (pp. 1–3) IEEE

  • Sutcliffe BT, Wilson S (2003) Potential energy curves and surfaces. In: Handbook of molecular physics and quantum chemistry, vol. 1: Fundamentals, pp 574–587

  • Swanepoel R (1983) Determination of the thickness and optical constants of amorphous silicon. J Phys E Sci Instrum 16(12):1214

    Google Scholar 

  • Tauc J (ed) (2012) Amorphous and liquid semiconductors. Springer Science & Business Media, Berlin

    Google Scholar 

  • Tsubouchi K, Mikoshiba N (1985) Zero-temperature-coefficient SAW devices on AlN epitaxial films. IEEE Transact Sonics Ultrason 32:634–644

    Google Scholar 

  • Wemple SH, DiDomenico M Jr (1971) Behavior of the electronic dielectric constant in covalent and ionic materials. Phys Rev B 3(4):1338

    Google Scholar 

  • Williamson GK, Smallman RE (1956) III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum. Philos Mag 1(1):34–46

    Google Scholar 

  • Xiong C, Pernice W, Schuck C, Tang HX (2014) Integrated photonic circuits in gallium nitride and aluminum nitride. Int J High Speed Electron Syst 23(01n02):1450001

    Google Scholar 

  • Zhang JM, Zhang Y, Xu KW, Ji V (2006) General compliance transformation relation and applications for anisotropic hexagonal metals. Solid State Commun 139(3):87–91

    Google Scholar 

Download references

Acknowledgments

This work was supported by the German Research Council (DFG) under Grant No. SE 1425/14-1 awarded to Abdallah Ababneh and Tobias Zengerle.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. Ababneh.

Ethics declarations

Competing interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ababneh, A., Dagamseh, A.M.K., Albataineh, Z. et al. Optical and structural properties of aluminium nitride thin-films synthesized by DC-magnetron sputtering technique at different sputtering pressures. Microsyst Technol 27, 3149–3159 (2021). https://doi.org/10.1007/s00542-020-05081-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00542-020-05081-4

Navigation