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Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications

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Abstract

In this investigation, extensive simulations were performed for an AlGaN/GaN Dual-Gate MISHEMT configuration using ATLAS TCAD to optimize the device design for high power switching applications. We conducted a simulation study for the breakdown characteristics of a Dual-Gate AlGaN/GaN (DG)-MISHEMT with different gate lengths as explained in this paper. The optimized device with 0.25 µm gate length exhibits an breakdown voltage > 700 V and an cut-off frequency of 50 GHz when gate2 (G2) is attached to the source and bias is applied at gate1 (G1). We studied the impact on a breakdown characteristics and the frequency performance of different dimensions such as distance between the two gates (LGG), gate1-to-source distance (LG1S) and gate1-to-drain distance (LG1D). The optimized device design was further used to study the scattering-parameters for different gate combinations. Further improvement in breakdown voltage and Johnson’s figure of merit (fT × VBR) is achieved for the DG-MISHEMT with HfO2–Al2O3 as gate insulator.

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Acknowledgements

This work was supported by Ministry of Science and Technology, Department of Science and Technology [Grant number SR/WOS-A/ET-143/2017], Government of India and one of the authors, Preeti Singh would like to acknowledge, Department of Electronic Science, University of Delhi South Campus, New Delhi-110021.

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  1. Department of Electronics Science, University of Delhi South Campus, New Delhi, 110021, India

    Preeti Singh & Mridula Gupta

  2. Department of Electronics, Maharaja Agrasen College, University of Delhi, New Delhi, India

    Vandana Kumari

  3. Department of Electronics Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India

    Manoj Saxena

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  1. Preeti Singh
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Singh, P., Kumari, V., Saxena, M. et al. Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications. J Comput Electron 20, 556–567 (2021). https://doi.org/10.1007/s10825-020-01604-4

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