Abstract
Ce3+-doped KBr single crystals were grown by Bridgman–Stockbarger technique. The grown crystals characterization results on photoluminescence (PL), powder X-ray diffractometer (PXRD), Fourier-transform infrared spectroscopy (FTIR), Fourier-transform Raman spectroscopy (FT-Raman), scanning electron microscopy, Vickers microhardness tester (Hv), electron paramagnetic resonance spectrum (EPR) and dielectric studies. The grown crystals were used to the applications such as optical, scintillators and detectors, etc. PL emission gives double broadbands wavelengths centered at 363 nm and 392 nm in the violet region of Ce3+-doped KBr single crystals. These lattice parameters were determined by PXRD and reveal hexagonal structure in the grown crystals. The FTIR spectrum gives the presence of various functional groups in the KBr:Ce3+ single crystals. The mechanical strength of the grown crystals has been analyzed by Vickers microhardness tester. It was found the work hardening coefficient (n) value is 1.2 and the material category was hard. EPR spectrum measurements are magnetic field modulation of 9–10 GHz (X-band frequency); from this maximum magnetic field, 3043 G and 3146 G values are calculated by Lande’s g-factor formula, which is found as 5.6 and 5.4. Dielectric constant and dielectric loss of grown single crystal were calculated as a function of frequency at room temperature.
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One of the authors (S. Bangaru) gratefully acknowledges the St. Joseph’s college, Trichy, and CECRI, India, for providing experimental support.
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Bharani, S., Bangaru, S. Photoluminescence, PXRD, EPR and dielectric characterization of Ce3+-doped KBr single crystals. Indian J Phys 95, 2341–2347 (2021). https://doi.org/10.1007/s12648-020-01898-x
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DOI: https://doi.org/10.1007/s12648-020-01898-x