Abstract—
The composition, the surface morphology, and the crystalline and electronic structure of МоО3 nanofilms are studied using a set of methods, namely, scanning electron spectroscopy and high energy electron diffraction, photoelectron spectroscopy, and secondary electron emission. These nanofilms are obtained by implanting \({\text{O}}_{{\text{2}}}^{{\text{ + }}}\) ions into a Mo single crystal heated to Т = 850 K. Films with different thicknesses (~30, 60, and 90 Å) are obtained at an ion energy of 1–5 keV and a dose of D = (4–8) × 1017 cm–2. It is shown that a continuous and homogeneous polycrystalline МоО3 film with a surface roughness of at most 1.5 nm is formed. The band gaps of these films are ~3.4 eV, and the widths of the conduction bands are 4.5 eV. It is discovered that there are four maxima of the density of electronic states in the valence band; probably, they are due to hybridization of the N5, N45, N4 energy levels of Mo with the L2, L23, and L3 energy levels of oxygen.
Similar content being viewed by others
REFERENCES
A. V. Korshunov, Size and Structure Effects in Metal Oxidation Processes: A Monograph (Tomsk, 2013) [in Russian].
A. A. Minnekhanov, E. V. Vakhrina, E. A. Konstantinova, and P. K. Kashkarov, JETP Lett. 107, 264 (2018).
E. P. Surovoi, V. E. Surovaia, and L. N. Bugerko, J. Phys. Chem. A 87 (5), 826 (2013).
V. S. Kovivchak and T. V. Panova, J. Surf. Invest.: X‑ray, Synchrotron Neutron Tech. 10, 1226 (2016).
S. A. Gavrilov and A. N. Belov, Electrochemical Processes in Micro- and Nanoelectronics Technology (Vysshee obrazovanie, Moscow, 2009) [in Russian].
D. B. Bunazarov, A. Kh. Kasymov, M. T. Normuradov, and T. S. Pugacheva, Radiotekh. Elektron., No. 7, 21 (1976).
E. P. Surovoi, L. N. Bugerko, and V. E. Surovaya, Russ. J. Phys. Chem. A 87, 826 (2013).
K. V. R. Chary, K. R. Reddy, K. Gurram, et al., J. Catal. 226 (2), 283 (2004).
D. O. Scanlon, G. W. Watson, D. J. Payne, et al., J. Phys. Chem. C 114, 4636 (2010). https://doi.org/10.1021/jp9093172
M. Kang, E. Oh, I. Kim, et al., Curr. Appl. Phys. 12, 489 (2012). https://doi.org/10.1016/j.cap.2011.08.007
N. Y. Bohne, F. Shevchenko, and J. Prokert, Nucl. Instrum. Methods Phys. Res., Sect. B 24 (1–2), 157 (2005).
B. Renner, C. Hammerl, and B. Rauschenbach, Nucl. Instrum. Methods Phys. Res., Sect. B 160 (3), 363 (2000).
N. V. Alov, Nucl. Instrum. Methods Phys. Res., Sect. B 256 (1), 337 (2007).
K. Ivna, J. Piltaverlavana, and R. Badovinac, Appl. Surf. Sci. 425, 416 (2017).
N. V. Alov and M. P. Leonov, Fiz. Khim. Obrab. Mater. 6 (6), 94 (1986).
B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, and G. Kh. Allayarova, Tech. Phys. 65, 795 (2020).
Z. A. Isakhanov, Z. E. Mukhtarov, B. E. Umirzakov, and M. K. Ruzibaeva, Tech. Phys. 56 (4), 546 (2011).
S. B. Donaev, F. Djurabekova, D. A. Tashmukhamedova, and B. E. Umirzakov, Phys. Status Solidi C 12 (1–2), 89 (2015).
Y. S. Ergashov, D. A. Tashmukhamedova, and E. Rabbimov, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 9, 350 (2015).
A. A. Aliev and Z. T. Shalimov, Poverkhn.: Rentgenovskie, Sinkhrotronnye Neitr. Issled., No. 8, 105 (2003).
B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, and K. K. Boltaev, Tech. Phys. 58 (6), 841 (2013).
V. K. Adamchuk and S. I. Fedosenko, Izv. Akad. Nauk SSSR, Ser. Fiz. 43 (3), 523 (1979).
ACKNOWLEDGMENTS
I am grateful to D.A. Tashmukhamedova and B.E. Umirzakov for useful discussions.
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated by L. Kulman
Rights and permissions
About this article
Cite this article
Allayarova, G.K. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms. J. Surf. Investig. 14, 1179–1182 (2020). https://doi.org/10.1134/S1027451020060026
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451020060026