Abstract
In this paper, the irradiation of porous silicon with Ar\({}^{+}\) ions with the energies of 100 and 200 keV and fluences from \(10^{12}\) cm\({}^{-2}\) up to \(3\times 10^{13}\) cm\({}^{-2}\) has been performed and studied. The effect of ion irradiation at different fluences and energies of incident particles on the photoluminescence spectrum of porous silicon has been analyzed. It has been shown that ion irradiation leads to a shift of the photoluminescence maximum, which grows with increasing energy. An increase in the fluence reduces the photoluminescence intensity, but, at the same time, has no effect on the magnitude of the maximum shift. The main mechanisms of the photoluminescence in porous silicon are also discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
K. Azaiez, R. B. Zaghouani, H. Meddeb, et al., Appl. Surf. Sci. 441, 272 (2018). https://doi.org/10.1016/j.apsusc.2018.02.006
P. N. Lim, T. Konishi, Z. Wang, et al., Mater. Lett. 212, 90 (2018). https://doi.org/10.1016/j.matlet.2017.10.076
W. Y. Tong, M. J. Sweetman, E. R. Marzouk, et al., Biomaterials 74, 217 (2016).
L. T. Canham, M. R. Houlton, W. Y. Leong, et al., J. Appl. Phys. 70, 422 (1991). https://doi.org/10.1063/1.350293
X. J. Li, I. De Zhu, Q. W. Chen, and Y. H. Zhang, Appl. Phys. Lett. 74, 389 (1999). https://doi.org/10.1063/1.123080
E. N. Abramova, A. M. Khort, A. G. Yakovenko, M. V. Tsygankova, Yu. V. Syrov, T. A. Sorokin, and V. I. Shvets, Dokl. Chem. 481, 166 (2018). https://doi.org/10.31857/S086956520002132-8
C. F. Ramirez-Gutierrez, J. C. Mosquera-Mosquera, and M. E. Rodrnguez-Garcna, J. Lumin. 201, 11 (2018). https://doi.org/10.1016/j.cocom.2014.11.003
Yin-Yu Chen, Der-Sheng Chao, Hsu-Sheng Tsai, and Jenq-Horng Liang, Nucl. Instrum. Methods Phys. Res., Sect. B 372, 114 (2016). https://doi.org/10.1016/j.nimb.2016.02.013
A. G. Hernandez, A. E. Escobosa-Echavarria, and Y. Kudriavtsev, Appl. Surf. Sci. 428, 1098 (2018). https://doi.org/10.1016/j.apsusc.2017.09.234
A. V. Kozhemyako, Yu. V. Balakshin, A. A. Shemukhin, and V. S. Chernysh, Semiconductors 51, 745 (2017). https://doi.org/10.1134/S1063782617060185
A. A. Shemukhin, Yu. V. Balakshin, A. P. Evseev, and V. S. Chernysh, Nucl. Instrum. Methods Phys. Res., Sect. B 406, 507 (2017). https://doi.org/10.1016/j.nimb.2017.04.055
Y. Spivak, in Proceedings of the IEEE International Conference on Electrical Engineering and Photonics (EExPolytech), 2018, p. 244. https://doi.org/10.1109/eexpolytech.2018.8564424
Yu. V. Balakshin, A. A. Shemukhin, A. V. Nazarov, A. V. Kozhemiako, and V. S. Chernysh, Tech. Phys. 63, 1861 (2018). https://doi.org/10.1134/S106378421812023X
A. V. Kozhemiako, A. P. Evseev, Yu. V. Balakshin, and A. A. Shemukhin, Semiconductors 53, 800 (2019). https://doi.org/10.1134/S1063782619060095
K. A. Gonchar, G. K. Musabek, T. I. Taurbaev, and V. Yu. Timoshenko, Semiconductors 45, 614 (2011).
A. S. Len’shin, V. M. Kashkarov, P. V. Seredin, Yu. M. Spivak, and V. A. Moshnikov, Semiconductors 45, 1183 (2011).
A. N. Mikhailov, A. I. Belov, A. B. Kostyuk, I. Yu. Zhavoronov, D. S. Korolev, A. V. Nezhdanov, A. V. Ershov, D. V. Guseinov, T. A. Gracheva, N. D. Malygin, E. S. Demidov, and D. I. Tetelbaum, Phys. Solid State 54, 368 (2012).
ACKNOWLEDGMENTS
This work was completed with financial support from the Russian Foundation for Basic Research (project no. 10-32-01040_mol-a).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated by A. Shishulin
About this article
Cite this article
Kozhemiako, A.V., Evseev, A.P., Spivak, Y.M. et al. The Effect of Argon Ion Irradiation Parameters on the Photoluminescence Spectrum of Porous Silicon. Moscow Univ. Phys. 75, 465–468 (2020). https://doi.org/10.3103/S0027134920050161
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S0027134920050161