Spin-Resonance Linewidths of Bismuth Donors in Silicon Coupled to Planar Microresonators

James O’Sullivan, Oscar W. Kennedy, Christoph W. Zollitsch, Mantas Šimėnas, Christopher N. Thomas, Leonid V. Abdurakhimov, Stafford Withington, and John J.L. Morton
Phys. Rev. Applied 14, 064050 – Published 16 December 2020
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Abstract

Ensembles of bismuth-donor spins in silicon are promising storage elements for microwave quantum memories due to their long coherence times, which exceed seconds. The operation of an efficient quantum memory requires the achievement of critical coupling between the spin ensemble and a suitable high-quality factor resonator—this in turn requires a thorough understanding of the line shapes for the relevant spin-resonance transitions, particularly considering the influence of the resonator itself on line broadening. Here, we present pulsed electron-spin-resonance measurements of ensembles of bismuth donors in natural silicon, above which niobium superconducting resonators have been patterned. By studying spin transitions across a range of frequencies and fields, we identify distinct line-broadening mechanisms and, in particular, those that can be suppressed by operating at magnetic-field-insensitive “clock transitions.” Given the donor concentrations and resonator used here, we measure a cooperativity C0.2 and based on our findings we discuss a route to achieve unit cooperativity, as required for a quantum memory.

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  • Received 16 July 2020
  • Revised 30 September 2020
  • Accepted 12 November 2020

DOI:https://doi.org/10.1103/PhysRevApplied.14.064050

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsQuantum Information, Science & Technology

Authors & Affiliations

James O’Sullivan1,‡, Oscar W. Kennedy1,‡, Christoph W. Zollitsch1, Mantas Šimėnas1, Christopher N. Thomas2, Leonid V. Abdurakhimov1,†, Stafford Withington2, and John J.L. Morton1,3,*

  • 1London Centre for Nanotechnology, University College London, 17–19 Gordon Street, London WC1H 0AH, United Kingdom
  • 2Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 3Department of Electrical and Electronic Engineering, University College London, Malet Place, London WC1E 7JE, United Kingdom

  • *jjl.morton@ucl.ac.uk
  • Present address: NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
  • These authors have contributed equally to this work.

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Issue

Vol. 14, Iss. 6 — December 2020

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