Abstract
We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-μm spectral range. The heterostructures were characterized by measuring photoluminescence (PL) emission and X-ray diffraction. It is established that variation of the ratio of quantum-well and barrier-layer thicknesses in the SL allows controlled shift of the PL peak position for lasing in the 1.3-μm range at almost constant PL efficiency.
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This work was supported by the Ministry of Science and Higher Education of the Russian Federation, research project no. 2019-1442.
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Translated by P. Pozdeev
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Rochas, S.S., Novikov, I.I., Gladyshev, A.G. et al. The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency. Tech. Phys. Lett. 46, 1128–1131 (2020). https://doi.org/10.1134/S1063785020110267
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DOI: https://doi.org/10.1134/S1063785020110267