Abstract
We found bulk n-GaAs layers grown by liquid phase epitaxy to be irregularly stressed. Deformation created by this stress causes a small but detectable quadrupole splitting of Zeeman nuclear energy levels. In our work we detected a very weak quadrupole splitting for 69Ga and 75As isotopes in bulk n-GaAs and obtained the value of the sample deformation. To this end, we used a new method that we call warm-up spectroscopy of nuclear spins in weak external magnetic fields.
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ACKNOWLEDGMETS
The authors acknowledge Saint-Petersburg State University for a research Grant no. 51125686 and RFBR for research Grant 19-32-90084.
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Litvyak, V.M., Cherbunin, R.V., Kalevich, V.K. et al. Determination of the Quadrupole Splitting in Bulk n-GaAs by Warm-Up Spectroscopy. Semiconductors 54, 1728–1729 (2020). https://doi.org/10.1134/S1063782620120180
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DOI: https://doi.org/10.1134/S1063782620120180