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The Use of Silicon Dioxide Films as Anti-Reflective Coating of Thermoelectric Single-Photon Detector

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

Antireflection layers are an important part of the sensitive elements of high performance single photon detectors. We have obtained amorphous silicon dioxide films by electron-beam sputtering on Al2O3, AlN, Si substrates as well as CeB6, LaB6, and W coatings. The elemental composition, microstructure and surface roughness, as well as optical characteristics of the samples obtained under various conditions of spraying are investigated. It is shown that SiO2/Al2O3 and SiO2/AlN two-layer coatings can provide high detection efficiency under registration of the radiation in the near IR region, which is used in telecommunication systems and devices for quantum information processing.

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ACKNOWLEDGMENTS

The authors are grateful to A.M. Gulian for the interest in the work and useful discussions.

Funding

The research was carried out with the financial support of the State Science Committee of the Ministry of Education and Science of the Republic of Armenia within the framework of the scientific project no. 18T-2F134.

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Authors and Affiliations

  1. Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia

    A. A. Kuzanyan, S. I. Petrosyan, A. S. Kuzanyan & G. R. Badalyan

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  1. A. A. Kuzanyan
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  2. S. I. Petrosyan
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  3. A. S. Kuzanyan
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  4. G. R. Badalyan
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Correspondence to A. A. Kuzanyan.

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Translated by V.M. Aroutiounian

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Kuzanyan, A.A., Petrosyan, S.I., Kuzanyan, A.S. et al. The Use of Silicon Dioxide Films as Anti-Reflective Coating of Thermoelectric Single-Photon Detector. J. Contemp. Phys. 55, 365–370 (2020). https://doi.org/10.3103/S1068337220040106

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  • DOI: https://doi.org/10.3103/S1068337220040106

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