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A bidirectional threshold switching selector with a symmetric multilayer structure

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Abstract

Selectors have been proposed as a highly effective tool for suppressing substantial leakage currents without sacrificing the high density of resistive random-access memory (RRAM) crossbar arrays. Among various selector types, the programmable metallization cell (PMC) selector is promising due to its simple structure and high selectivity. In this work, we demonstrate a new PMC selector that exhibits bidirectional threshold switching behavior by implementing symmetric multilayer dielectrics. The proposed Ag/SiTe/HfO2/SiTe/Ag selector device has a low off current (< 10−10 A), high selectivity (>105), and low threshold voltage variation (< 0.05). Upon connection to a bipolar RRAM cell via a wire, the proposed selector successfully suppresses the leakage current of an unselected device below the threshold voltage.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61604177, 61704191, 61471377).

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Authors and Affiliations

  1. College of Electronic Science and Technology, National University of Defense Technology, Changsha, 410073, China

    Qingjiang Li, Kun Li, Yongzhou Wang, Sen Liu & Bing Song

Authors
  1. Qingjiang Li
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  2. Kun Li
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  3. Yongzhou Wang
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  4. Sen Liu
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  5. Bing Song
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Correspondence to Bing Song.

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Li, Q., Li, K., Wang, Y. et al. A bidirectional threshold switching selector with a symmetric multilayer structure. Sci. China Inf. Sci. 64, 142402 (2021). https://doi.org/10.1007/s11432-020-2960-x

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  • DOI: https://doi.org/10.1007/s11432-020-2960-x

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