Abstract
Selectors have been proposed as a highly effective tool for suppressing substantial leakage currents without sacrificing the high density of resistive random-access memory (RRAM) crossbar arrays. Among various selector types, the programmable metallization cell (PMC) selector is promising due to its simple structure and high selectivity. In this work, we demonstrate a new PMC selector that exhibits bidirectional threshold switching behavior by implementing symmetric multilayer dielectrics. The proposed Ag/SiTe/HfO2/SiTe/Ag selector device has a low off current (< 10−10 A), high selectivity (>105), and low threshold voltage variation (< 0.05). Upon connection to a bipolar RRAM cell via a wire, the proposed selector successfully suppresses the leakage current of an unselected device below the threshold voltage.
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This work was supported by National Natural Science Foundation of China (Grant Nos. 61604177, 61704191, 61471377).
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Li, Q., Li, K., Wang, Y. et al. A bidirectional threshold switching selector with a symmetric multilayer structure. Sci. China Inf. Sci. 64, 142402 (2021). https://doi.org/10.1007/s11432-020-2960-x
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DOI: https://doi.org/10.1007/s11432-020-2960-x