Ultrathin sulfur-doped holey carbon nitride nanosheets with superior photocatalytic hydrogen production from water

https://doi.org/10.1016/j.apcatb.2020.119742Get rights and content

Highlights

  • Ultrathin sulfur-doped holey carbon nitride nanosheets were successfully prepared via self-templating approach.

  • Optimized S-CN(0.1) performed superior hydrogen evolution rate of 6225.4 μmol g−1 h−1 (λ> 420 nm), almost 45 times higher than the pristine bulk one.

  • An apparent quantum yield of 10 % at 420 nm was achieved for hydrogen production.

  • A reliable and universal method was developed to realize morphological evolution of graphitic carbon nitride with increasing reaction sites.

Abstract

Surface engineering is an efficient way to enhance photoabsorption, promote charge separation and boost photocatalysis. Herein, sulfur-doped holey g-C3N4 nanosheets have been prepared through a universal self-templating approach with thiocyanuric acid as the single-precursor. By subtly controlling the feeding amount of precursor, the synthesized sulfur-doped holey g-C3N4 nanosheets exhibit excellent visible-light driven photocatalytic hydrogen production activity. The optimized catalyst presents a hydrogen evolution rate of 6225.4 μmol g−1h−1, with an apparent quantum yield of 10 % at 420 nm. Comprehensive characterizations and theoretical calculations suggest that the enhanced photocatalysis is attributed to the synergy of the enlarged surface area, the negatively-shifted conduction band, and the narrowed bandgap due to sulfur-doping and ultra-thin two-dimensional topology. This work highlights the importance of controlling the precursor dosage and inducing sulfur doping into the polymer, providing a promising and reliable strategy to simultaneously regulate the nanostructural and electronic structure of g-C3N4 for highly efficient photocatalysis.

Graphical abstract

Sulfur-doped holey carbon nitride nanosheets were facilely prepared through subtly controlling of thiocyanuric acid precursor, resulting into an apparent quantum yield of 10 % at 420 nm for hydrogen production from water.

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Introduction

Highly efficient photocatalysts have attracted tremendous attention due to their potential applications in renewable energy supply and environmental remediation [[1], [2], [3]]. The key is the development of efficient photocatalysts. Among various photocatalysts, graphitic carbon nitride (g-C3N4) has emerged as a promising metal-free visible-light responsive photocatalyst due to its moderate bandgap and high stability [[4], [5], [6]]. Thermolysis of various nitrogen-rich precursors could prepare g-C3N4 in large-scale, but the insufficient photoabsorption, high charge recombination rate and low quantum yield still suppress its photocatalytic performance [[7], [8], [9]]. To improve the efficiency, great efforts including nanostructural and surface modification have been devoted [[10], [11], [12], [13], [14], [15]].

Two-dimensional nanosheets are a novel category of nanostructural materials and prevailing because of their unique layered features of intriguing surface, optical and electronic properties [[16], [17], [18]]. Exfoliation of the bulk was a post-synthetic method to break down the interlayer van der Waals' forces into two-dimensional nanosheets, which had been demonstrated as an efficient route for shortening the charge transfer pathway, increasing the surface area and providing more active sites [19,20]. Through ultrasonic-, thermal- and chemical-assisted exfoliation, pristine g-C3N4 nanosheets were prepared [19,21,22]. However, the enlarged surface area would result in an increased bandgap energy due to the quantum confinement effect, decreasing the photoabsorption ability. Moreover, the severe charge recombination could hardly be suppressed through simple morphological modification [23]. Therefore, developing a green and reliable strategy for low-cost assembly of two-dimensional g-C3N4 nanosheets as well as optimizing its electronic structure is still highly desired.

Anion doping is generally an alternative and important approach owing to the effectiveness in regulating the electronic structure and broadening the region of light absorption. With anion doping like B, O, C, P, I, the atomic and electronic properties could be positively optimized through the injection of localized states from dopants [[24], [25], [26], [27], [28], [29], [30], [31]]. As the conduction and valence band of g-C3N4 were theoretically confirmed to be primarily derived from the pz orbitals of carbon and nitrogen [32], the substitution of these atoms would primarily lead to the delocalization of big π-conjugated system, boosting the conductivity of g-C3N4. The more negative conduction band would exhibit stronger photoreduction ability and provide stronger driving force for hydrogen evolution. Nevertheless, heteroatom dopants might also cause doping asymmetry and serve as new charge recombination sites [33,34]. Thus, to enhance the charge separation and maintain suitable photoabsorption, subtle regulation of the type and location of dopants is of great significance.

In this work, sulfur-doped holey g-C3N4 nanosheets were fabricated through a controllable self-templating approach without any additives. Based on the nucleation-growth mechanism, tuning the amount of precursor would result in the optimized concentration in a semi-closed synthesis system for thermally-driven polymerization, thereafter generating g-C3N4 nanosheets. With thiocyanuric acid as the precursor, ultrathin sulfur-doped holey nanosheets were prepared. The dramatically enhanced photoactivity for hydrogen production is attributed to the enlarged surface area, the enhanced photoabsorption, and the suppressed charge recombination derived from the synergy of sulfur-doping and ultrathin holey nanosheet topology.

Section snippets

Preparation of the sulfur-doped holey g-C3N4 nanosheets

Sulfur-doped holey g-C3N4 nanosheets (labelled as S-CN(x), where x represents the amount of the precursor) were prepared through one-step thermolysis of thiocyanuric acid. Various feeding amount of thiocyanuric acid from 0.1 to 2.0 g first spread in a crucible, coated with silver paper and covered with a lid. Then the semi-closed crucible was transferred to the tube furnace and underwent calcination in the flowing argon atmosphere (99.999 vol.%) at 550 °C for 3 h at a ramping rate of 10 °C/min.

Structure and morphology

Thiocyanuric acid was used here as a sulfur-rich precursor for sulfur doped CN (S-CN) fabrication. Based on the gas-phase nucleation growth mechanism [35], decreasing the gaseous concentration could slow down the corresponding nucleation and growth rate, then being favorable for explosive nucleation, forming more crystal nucleus and getting decreased size. The concentration of the gaseous thiocyanuric acid precursor in this work was optimized through subtly controlling its feeding amount in the

Conclusion

In summary, sulfur-doped holey g-C3N4 nanosheets were prepared through subtly controlling the amount of thiocyanuric acid precursor. Thin thickness from 2.4 nm of S-CN(2.0) to 0.8 nm of S-CN(0.1) and the corresponding enlarged SBET were observed, which is beneficial to expose more accessible surface to absorb and active H+. XPS and 13C NMR spectra evidenced the sulfur doping topology, resulting in greatly promoted visible light absorption. The conduction band was thus shifted from 0.62 V of

CRediT authorship contribution statement

Lei Luo: Design, Methodology, Investigation, Data collection, Drafting.

Zhuyu Gong: Data collection, Investigation.

Jiani Ma: Data analysis, Result discussion, Resources.

Keran Wang: Investigation.

Haixing Zhu: Investigation.

Keyan Li: Results discussion.

Lunqiao Xiong: Results discussion, Revision.

Xinwen Guo: Supervision, Resources, Review, Editing.

Junwang Tang: Overall supervision, Resources, Review, Editing.

Declaration of Competing Interest

The authors reported no declarations of interest.

Acknowledgements

The authors are thankful for the China Postdoctoral Science Foundation (No. 2019M663802), the National Natural Science Foundation of China (No. 21973075, 21306018) and the Shannxi Key Research Grant (No. 2020GY-244).

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