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Impact of Film Stress and Film Thickness Process Control on GaAs-TiAu Metal Adhesion

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Abstract

The fabrication of GaAs-based optoelectronic ridge-waveguide devices requires deposition of a topside-contact metallization for proper device operation. Fabrication delays occurring during the processing of TiAu-contact pads have been linked to poor adhesion and metal blister formation, factors that negatively affect the final device yield. In this study, we examined sputter-deposited Ti and Au films to determine the impact of film-thickness process control and film stress as measured by wafer bow. We theorized that competing stress relaxation forces between the Ti and Au films would produce a post-deposition change in wafer bow, which affects the Au film, setting the stage for blister creation. We now report the development of a reduced-stress sputter-deposited TiAu-contact metallization and demonstrate the utility of the modified process with fabrication of blister-free ridge-waveguide devices with high device yield.

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Acknowledgments

The authors wish to thank George Turner for editorial review and guidance, Casey Reed for graphic arts assistance, Kevin Ray, Raksa Tan, and William Spencer for fabrication support. Approved for public release. Distribution is unlimited. This material is based upon work supported by the United States Air Force under Air Force contract No. FA8702-15-D-0001. Any opinions, findings, conclusions, and recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the United States Air Force.

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  1. Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood St., Lexington, MA, 02420, USA

    Michael K. Connors, Jennifer P. Coletta & Michael J. Sheehan

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  1. Michael K. Connors
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  2. Jennifer P. Coletta
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  3. Michael J. Sheehan
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Correspondence to Michael K. Connors.

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Connors, M.K., Coletta, J.P. & Sheehan, M.J. Impact of Film Stress and Film Thickness Process Control on GaAs-TiAu Metal Adhesion. J. Electron. Mater. 49, 7219–7227 (2020). https://doi.org/10.1007/s11664-020-08521-z

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