Ternary hypervalent silicon hydrides via lithium at high pressure

Tianxiao Liang, Zihan Zhang, Xiaolei Feng, Haojun Jia, Chris J. Pickard, Simon A. T. Redfern, and Defang Duan
Phys. Rev. Materials 4, 113607 – Published 18 November 2020
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Abstract

Hydrogen is rarely observed as a ligand in hypervalent species, however, we find that high-pressure hydrogenation may stabilize hypervalent hydrogen-rich materials. Focusing on ternary silicon hydrides via lithium doping, we find anions composed of hypervalent silicon with H ligands formed under high pressure. Our results reveal two different hypervalent anions: layered SiH5 and tricapped triangular prismatic SiH62. These differ from octahedral SiH62 described in earlier studies. In addition, there are further hydrogen-rich structures, Li3SiH10 and Li2SiH6+δ, which may be stabilized at high pressure. Our work provides pointers to future investigations on hydrogen-rich materials.

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  • Received 14 September 2020
  • Accepted 4 November 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.113607

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Tianxiao Liang1, Zihan Zhang1, Xiaolei Feng2,3,*, Haojun Jia4, Chris J. Pickard5,6, Simon A. T. Redfern7,8, and Defang Duan1,†

  • 1College of Physics, Jilin University, Changchun 130012, China
  • 2Institute for Disaster Management and Reconstruction, Sichuan University - the Hong Kong Polytechnic University, Chengdu 610207, China
  • 3Department of Earth Science, University of Cambridge, Downing Site, Cambridge CB2 3EQ, United Kingdom
  • 4Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 5Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
  • 6Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
  • 7Asian School of the Environment, Nanyang Technological University, Singapore 639798
  • 8Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China

  • *xf232@cam.ac.uk
  • duandf@jlu.edu.cn

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Issue

Vol. 4, Iss. 11 — November 2020

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