Issue 10, 2020

Engineering block copolymer materials for patterning ultra-low dimensions

Abstract

The landscape of block copolymer (BCP) lithographic patterning has evolved significantly from the early days of the first generation BCP material, poly(styrene)-block-poly(methyl methacrylate) (PS-b-PMMA). The low Flory–Huggins interaction parameter (χ) of the workhorse material PS-b-PMMA prevents ultra-low dimensional scaling (<20 nm), which is the lifeblood of the semiconductor industry. In recent years, this bottleneck has been circumvented through the precise engineering of novel BCPs possessing either high χ and low polymerization degree (N) values or complex macromolecular architectures. We provide a synopsis of recently engineered BCP materials, examining the synthetic routes employed and thin film processing used for nanolithography. Fruitful results emanating from silicon and fluorine containing BCPs are emphasized as they provide a promising platform for sub-10 nm scaling. We subsequently examine routes to continue the relentless scaling for logic technologies with a focus on the potential integration of “advanced” BCP architectures in nanomanufacturing.

Graphical abstract: Engineering block copolymer materials for patterning ultra-low dimensions

Article information

Article type
Review Article
Submitted
18 Aug 2020
Accepted
27 Oct 2020
First published
28 Oct 2020

Mol. Syst. Des. Eng., 2020,5, 1642-1657

Engineering block copolymer materials for patterning ultra-low dimensions

C. Cummins, G. Pino, D. Mantione and G. Fleury, Mol. Syst. Des. Eng., 2020, 5, 1642 DOI: 10.1039/D0ME00118J

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