Proximity-induced magnetization in graphene: Towards efficient spin gating

Mihovil Bosnar, Ivor Lončarić, P. Lazić, K. D. Belashchenko, and Igor Žutić
Phys. Rev. Materials 4, 114006 – Published 13 November 2020

Abstract

Gate-tunable spin-dependent properties could be induced in graphene at room temperature through the magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene (Gr). We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the Co/Pt/Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties.

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  • Received 14 February 2020
  • Revised 14 September 2020
  • Accepted 29 October 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.114006

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mihovil Bosnar1,*, Ivor Lončarić1,†, P. Lazić2,1, K. D. Belashchenko3, and Igor Žutić4

  • 1Ruđer Bošković Institute, 10000 Zagreb, Croatia
  • 2Research Computing Support Services Group, University of Missouri, Columbia, Missouri 65211-7010, USA
  • 3University of Nebraska-Lincoln and Nebraska Center for Materials and Nanoscience, Lincoln, Nebraska 68588-0299, USA
  • 4University at Buffalo, State University of New York, Buffalo, New York 14260-1500, USA

  • *mbosnar@irb.hr
  • ivor.loncaric@gmail.com

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Issue

Vol. 4, Iss. 11 — November 2020

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