Abstract
A novel electrochemical profiling technique consisting in integration capacitance–voltage characteristics was proposed, developed and proven. The aim is to overcome the insufficient resolution in charge carrier concentration measurements during commonly used electrochemical capacitance–voltage profiling. This is very actual task for modern low-dimensional optoelectronics. According to the introduced “profiling window”, after each etching step the coordinate interval is selected, the concentration distribution in which is to be matched itself and by the first derivative at the edges with the concentration in adjacent intervals. To achieve these conditions the minimum dissipation factor should be maintained for each C–V characteristic at the corresponding etching depth. The method allows both to obtain general free charge carrier concentration depth distribution over unlimited structure depth and to achieve necessary resolution in key regions, even if they are lying at a high depth. Particularly, in GaAs-based heterostructure concentration profile of deep-lying quantum well and a delta layer (ultra-thin (2 nm) profile of dopant with extremely high concentration) were confidently distinguished with magnitude difference of 20% in the dip region in between. Besides, we have shown how quantum-confined objects of different origins give different concentration responses when electrochemical capacitance–voltage profiling with sequential etching. An explanation for this dissimilarity is given.
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References
Zinner E (1980) Depth profiling by secondary ion mass spectrometry. Scanning 3:57–78
Schroder D (2006) Semiconductor material and device characterization. Wiley, Hoboken
Zubkov V I (2007) Diagnostika Poluprovodnikovyh Nanogeterostruktur Metodami Spektroskopii Admittansa. Elmor, St. Petersburg
Blood P (1986) Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers. Semicond Sci Technol 1:7–27
Busch A (2009) Test method for measuring carrier concentrations in epitaxial layer structures by ECV profiling. SEMI, USA M46–1101
Frolov D S, Zubkov V I (2016) Frequency dispersion of capacitance–voltage characteristics in wide bandgap semiconductor-electrolyte junctions. Semicond Sci Technol 31:125013
Frolov D S, Yakovlev G E, Zubkov V I (2019) Technique for the electrochemical capacitance–voltage profiling of heavily doped structures with a sharp doping profile. Semiconductors 53:268–272
Nishinaga J, Hayashi T, Hishida K, Horikoshi Y (2010) Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE. Phys Status Solidi C 7:2486–2489
Dorokhin M V, Demina P B, Baidus N V, Danilov Y u A, Zvonkov B N, Prokofeva M M (2010) Injection electroluminescence from quantum-size InGaAs/GaAs structures with metal/semiconductor and metal-oxide-semiconductor junctions. J Surf Invest 4:390–394
Ambridge T, Stevenson J L, Redstall R M (1980) Applications of electrochemical methods for semiconductor characterization: I . Highly reproducible carrier concentration profiling of VPE “Hi-Lo” n-GaAs. J Electrochem Soc 127:222–228
Petrovskaya A N, Zubkov V I (2009) Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K. Semiconductors 43:1328–1333
Lang D V (1974) Deep-level transient spectroscopy: a new method to characterize traps in semiconductors. J Appl Phys 45:3023–3032
Zubkov V I, En K K, Kopylov A A, Solomonov A V (1991) Transient capacitance spectroscopy of deep levels in semiconductor solid solutions: method for determination of the density-of-states function. Sov Phys Semicond 25:1302
Helmholtz H (1853) Ueber Einige Gesetze Der Vertheilung Elektrischer Stroeme in Koerperlichen Leitern Mit Anwendung Auf Die Thierisch Elektrischen Versuche. Ann Phys 165:211–233
Memming R (2015) Semiconductor electrochemistry. Wiley-VCH, Weinheim
Grahame D C (1950) Effects of dielectric saturation upon the diffuse double layer and the free energy of hydration of ions. J Chem Phys 18:903–909
Zubkov V I, Melnik M A, Solomonov A V (2004) Determination of band offsets in strained InxGa1-xAs/GaAs quantum wells by capacitance-voltage profiling and Schrodinger-Poisson self-consistent simulation. Phys Rev B 70:075312
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Yakovlev, G., Zubkov, V. Integration of electrochemical capacitance–voltage characteristics: a new procedure for obtaining free charge carrier depth distribution profiles with high resolution. J Solid State Electrochem 25, 797–802 (2021). https://doi.org/10.1007/s10008-020-04855-0
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DOI: https://doi.org/10.1007/s10008-020-04855-0