Abstract
In the context of Haldane–Anderson’s model, the transferred charge and the energy of adsorption of alkali metal and halogen atoms on the C and Si faces of the 3C-, 6H-, and 4H-SiC polytypes are estimated. The contributions of the band and local states to the formation of the charge of adatoms and the metallic and ionic components of the adsorption energy are clarified.
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Translated by E. Smorgonskaya
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Davydov, S.Y., Posrednik, O.V. Adsorption of Group-I and -VII Atoms on Silicon-Carbide Polytypes. Semiconductors 54, 1410–1416 (2020). https://doi.org/10.1134/S1063782620110275
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DOI: https://doi.org/10.1134/S1063782620110275