Abstract
A scheme for measuring the reflection spectrum with an accuracy of 10–3 for a wide spectral region is described. To demonstrate it, the reflection spectra of a GaAs substrate with an antireflection coating and a layer of InGaAsP/InP quantum wells on an InP substrate were obtained.
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This study was supported by the Russian Foundation for Basic Research (project no. 18-29-20007).
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Kovalyov, A.A. Measuring the Reflective Spectra in a One-Beam Scheme. Instrum Exp Tech 63, 842–845 (2020). https://doi.org/10.1134/S0020441220060093
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DOI: https://doi.org/10.1134/S0020441220060093