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The influence of substrate morphology on the thermal radiation properties of SiC coating

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Abstract

SiC coating was prepared on the graphite substrate and the effects of substrate morphology on the thermal radiation properties of SiC coating were investigated. As the surface roughness of the graphite substrate decreasing from 2.95 to 0.68 μm, the total emissivity of SiC coating increased 28.33% at 1000 °C and 36.21% at 1600 °C, respectively. At the same time, the spectral emissivity of SiC coating on the graphite substrate all presented the obvious characteristic thermal radiation of SiC. Those results meant that the thermal radiation properties of the coating were both dominated by the substrate and coating. A simple coating model had been established to explain the effect of the substrate morphology on the heat flow between the substrate and coating. The rough substrate morphology enhanced the energy dissipation at interface and weakened the thermal radiation properties of coating finally.

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Acknowledgements

The authors thank the support from the China Postdoctoral Science Foundation (No. 2018M643816XB), Natural Science Basic Research Program of Shaanxi (Program No. 2020JQ-622) and Scientific Research Program Funded by Shaanxi Provincial Education Department (Program No. 20JS097).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Xi’an University of Technology, 710048, Xi’an, Shaanxi, People’s Republic of China

    Fuyuan Wang & Shuhua Liang

  2. Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology, Xi’an University of Technology, Xi’an, Shaanxi, 710048, People’s Republic of China

    Fuyuan Wang & Shuhua Liang

  3. Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi, 710072, People’s Republic of China

    Laifei Cheng

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Wang, F., Cheng, L. & Liang, S. The influence of substrate morphology on the thermal radiation properties of SiC coating. Appl. Phys. A 126, 912 (2020). https://doi.org/10.1007/s00339-020-04089-x

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