Abstract
In this work, we present a nanoscale solid state structure, which is a 3D-array of tunnel-coupled arsenic dopants in silicon with a system of metallic electrodes leading to them. The structures of eight metal electrodes were fabricated on the inhomogeneously in depth doped with arsenic silicon surface, four of which converge to a region 50 nm in diameter, and four to a region of 200 nm. After removal of a thin highly conducting upper silicon layer, single-electron transport in an array (reservoir) of arsenic impurity atoms located between the electrodes is demonstrated. The Coulomb blockade was \({\sim}100\) mV at a temperature of 4.2 K. The proposed structure can be used as a reservoir neural network, where single impurity atoms act as neurons, and electrodes will act as input and output terminals of the device, and also be used to configure the neural network. The operating temperature of such devices can be significantly increased due to the relatively small effective size of impurity arsenic atoms in silicon (3–5 nm).
Similar content being viewed by others
REFERENCES
B. E. Kane, Nature (London, U.K.) 393, 133 (1998).
J. J. Pla, K. Y. Tan, J. P. Dehollain, et al., Nature (London, U.K.) 489, 541 (2012).
M. Fuechsle, J. A. Miwa, S. Mahapatra, et al., Nat. Nanotechnol. 7, 242 (2012).
M. Veldhorst, C. H. Yang, J. C. C. Hwang, et al., Nature (London, U.K.) 526, 410 (2015).
G. Yamahata, K. Nishiguchi, and A. Fujiwara, Nat. Commun. 5, 5038 (2014).
G. C. Tettamanzi, R. Wacquez, and S. Rogge, New J. Phys. 16, 063036 (2014).
H. Sellier, G. P. Lansbergen, J. Caro, et al., Phys. Rev. Lett. 97, 206805 (2006).
G. P. Lansbergen, R. Rahman, C. J. Wellard, et al., Nat. Phys. 4, 656 (2008).
M. Pierre, R. Wacquez, X. Jehl, et al., Nat. Nanotechnol. 5, 133 (2010).
K. Y. Tan, K. W. Chan, M. Mottonen, et al., Nano Lett. 10, 11 (2010).
E. Prati, M. De Michielis, M. Belli, et al., Nat. Nanotechnol. 23, 215204 (2012).
D. Moraru, A. Samanta, T. Mizuno, et al., Nano Lett. 4, 6219 (2014).
J. A. Miwa, J. A. Mol, J. Salfi, et al., Appl. Phys. Lett. 103, 043106 (2013).
B. Voisin, J. Salfi, J. Bocquel, et al., J. Phys.: Condens. Matter 27, 154203 (2015).
A. S. Trifonov, D. E. Presnov, I. V. Bozhev, et al., Ultramicroscopy 179, 33 (2017).
D. E. Presnov, I. V. Bozhev, A. V. Miakonkikh, et al., J. Appl. Phys. 123, 054503 (2018).
E. Prati, R. Latempa, and M. Fanciulli, Phys. Rev. B 80, 165331 (2009).
M. Gasseller, M. DeNinno, R. Loo, et al., Nano Lett. 11, 5208 (2011).
S. J. Hile, M. G. House, E. Peretz, et al., Appl. Phys. Lett. 107, 093504 (2015).
G. Lovat, B. Choi, D. W. Paley, et al., Nat. Nanotechnol. 12, 1050 (2017).
S. J. Shin, J. J. Lee, H. J. Kang, et al., Nano Lett. 11, 1591 (2011).
C. Gallicchio, A. Micheli, and L. Pedrelli, Neurocomputing 268, 87 (2017).
H. Jaeger, German Natl. Res. Center Inform. Technol. GMD Tech. Rep. 148 (34), 13 (2001).
S. K. Bose, C. P.Lawrence, Z. Liu, et al., Nat. Nanotechnol. 10, 1048 (2015).
T. Chen, J. van Gelder, B. van de Ven, et al., Nature (London, U.K.) 577, 341 (2020).
S. A. Dagesyan, V. V. Shorokhov, D. E. Presnov, et al., Nanotechnology 28, 225304 (2017).
S. A. Dagesyan, V. V. Shorokhov, D. E. Presnov, E. S. Soldatov, A. S. Trifonov, V. A. Krupenin, and O. V. Snigirev, Mosc. Univ. Phys. Bull. 72, 474 (2017).
V. V. Shorokhov, D. E. Presnov, S. V. Amitonov, et al., Nanoscale 9, 613 (2017).
D. E. Presnov, S. A. Dagesyan, I. V. Bozhev, V. V. Shorokhov, A. S. Trifonov, A. A. Shemukhin, I. V. Sapkov, I. G. Prokhorova, O. V. Snigirev, and V. A. Krupenin, Mosc. Univ. Phys. Bull. 74, 165 (2019).
S. A. Dagesyan, S. Yu. Ryzhenkova, D. E. Presnov, et al., Proc. SPIE 11022, 110221P (2019).
U. Geigenmuller and G. Schon, Europhys. Lett. 10 (8), 765.
V. A. Krupenin, V. O. Zalunin, and A. B. Zorin, Microelectron. Eng. 81, 217 (2005).
Funding
This work was supported by the Russian Science Foundation, project no. 16-12-00072. The first and the second authors express their special gratitude to the Russian Foundation for Basic Research (project no. 18-37-00414). Equipment of the Lithography and Microscopy Center of the Moscow State University was used for this work.
Author information
Authors and Affiliations
Corresponding authors
Additional information
Translated by A. Muravnik
About this article
Cite this article
Dagesyan, S.A., Ryzhenkova, S.Y., Sapkov, I.V. et al. A Multi-Electrode System for the Implementation of Solid-State Quantum Devices Based on a Disordered System of Dopant Atoms in Silicon. Moscow Univ. Phys. 75, 331–335 (2020). https://doi.org/10.3103/S0027134920040062
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S0027134920040062