Abstract
The stress-strain relationship, anisotropy, heavy- and light-hole structures, and the Phillips ionicity in GaAs are theoretically investigated by Bond matrices model as well as Zener and Every anisotropies. The results show that there is a simple correspondence between anisotropy and the extreme directions of these physical properties, i.e., [0 0 1], [1 1 0] and [1 1 1] directions. Meanwhile the lattice wave propagation, phonon focusing, and phonon distributions in GaAs are also theoretically studied in detail based on lattice-dynamical method. The slowness surface of three lattice waves are the mixing of longitudinal and transverse modes. The feature is that the lattice waves, saddle Gaussian curvatures, and caustic structures are modulated by the anisotropy. The topology in phonon distribution is discussed by the presence of caustics in the anisotropic flux of phonons emanating from a localized phonon distribution. Their topological structures show the phonon distribution and the phonon focusing. The anisotropy not only affects lattice wave propagation and phonon distribution, but influences the phonon focusing.
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A.M. Raya, D. Fuster, J.M. Lloren, Nanomaterials 9, 856 (2019)
H.C. Chung, C.W. Chiu, M.F. Lin, Sci. Rep. 9, 2332 (2019)
S.M. Sze, K.K. Ng,Physics of Semiconductor Devices, 3rd edn. (Wiley-Interscience, Hoboken, NJ, USA, 2006)
J.M. Besson, J.P. Ltie, P. Alain et al., Phys. Rev. B 44, 4214 (1991)
S. Liu, M.B. Sinclair, S. Saravi et al., Nano Lett. 16, 5426 (2016)
V.F. Gili, L. Carletti, A. Locatelli et al., Opt. Express 24, 15965 (2016)
K. Berland, C. Persson, J. Appl. Phys. 123, 205703 (2018)
H. Tong, M.W. Wu, Phys. Rev. B 83, 235323–1 (2011)
M. Janipour, I.B. Misirlioglu, K. Sendur, Materials 12, 2412 (2019)
Y. Cui, C.M. Lieber, Science 291, 851 ( 2001)
M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, C.M. Lieber, Nature 415, 617 (2002)
J. Johansson, L.S. Karlsson, C.P.T. Svensson, T. Mårtensson, B.A. Wacaser, K. Deppert, L. Samuelson, W. Seifert, Nat. Mater. 5, 574 (2006)
F. Qian, S. Gradecak, Y. Li, H.G. Park, Y. Dong, Y. Ding, Z.L. Wang, M.C. Lieber, Nat. Mater. 7, 701 (2008)
S. Nadj-Perge, S.M. Frolov, E.P.A.M. Bakkers, L.P. Kouwenhoven, Nature 468, 1084 (2010)
C.C. Chen, A.B. Herhold, C.S. Johnson, A.P. Alivisatos, Science 276, 398 (1997)
G. Viera, M. Mikikian, E. Bertran, P.R. Cabarrocas, L. Boufendi, J. Appl. Phys. 92, 4684 (2002)
T. Kettler, L.Y. Karachinskii, N.N. Ledentsov et al., Appl. Phys. Lett. 89, 041113 (2006)
L. Seravalli, G. Trevisi, P. Frigeri, R.J. Royce, D.J. Mowbray, J. Appl. Phys. 112, 034309 (2012)
S. Ghanad-Tavakoli, M.A. Naser, D.A. Thompson, M.J. Deen, J. Appl. Phys. 106, 063533 (2009)
M. Kaminska, Rev. Phys. Appl. 23, 793 (1988)
M. Kaminska, M. Skawronski, J. Lagowski, J.M. Parsey, H.C. Gatos, Appl. Phys. Lett. 43, 302 (1983)
R.F.C. Farrow,Molecular Beam Epitaxy: Applications to Key Materials (Noyes, New Jersey, 1995)
T. Asano, Z. Fang, A. Madhukar, J. Appl. Phys. 107, 073111 (2010)
O.V. Vakulenko, S.L. Golovynskyi, S.V. Kondratenko, J. Appl. Phys. 110, 043717 (2010)
S.L. Golovynskyi, O.I. Dacenko, S.V. Kondratenko, S.R. Lavoryk, Y.I. Mazur et al., J. Appl. Phys. 119, 184303 (2016)
S.L. Golovynskyi, Y.I. Mazur, Z.M. Wang, M.E. Ware, O.V. Vakulenko, G.G. Tarasov, G.J. Salamo, Phys. Lett. A 378, 2622 (2014)
S.V. Kondratenko, O.V. Vakulenko, Y.I. Mazur, V.G. Dorogan, E.J. Marega, M. Benamara, M.E. Ware, G.J. Salamo, J. Appl. Phys. 116, 193707 (2014)
S.L. Golovynskyi, L. Seravalli, G. Trevisi, P. Frigeri, E. Gombia, O.I. Dacenko, S.V. Kondratenko, J. Appl. Phys. 117, 214312 (2015)
W.L. Bond,Crystal Technology (John Wiley and Sons, New York, 1976)
G.L. Koos, J.P. Wolfe, Phys. Rev. B 29, 6015 (1984)
Y. Liu, L.T. Gao, G. Lu, Arch. Appl. Mech. 77, 407 (2007)
P. Brüesch,Phonons: Theory and Experiments I (Springer-Verlag Berlin Heidelberg, New York, 1982)
P.S. Spoor, J.D. Maynard, Appl. Phys. Lett. 70, 1959 (1997)
C. Zener,Elasticity and Anelasticity of Metals (University Chicago Press, Chicago, 1984)
A.G. Every, Phys. Rev. B 22, 1746 (1980)
S. Adachi, inProperties of Group-IV, III–V and II–VI Semiconductors (John Wiley & Sons Ltd., The Atrium, Southern Gate, Chichester, West Sussex, England, 2005), p. 45
Y.P.C. Calvin, L.C. Shun, Phys. Rev. B 46, 4111 (1992)
M. Kitamura, S. Muramatsu, W.A. Harrison, Phys. Rev. B. 46, 1350 (1992)
A.H. Nayfeh,Wave Propagation in Layered Anisotropic Media with Applications to Composites (Elsevier, Amsterdam, 1995)
A.G. Every, Phys. Rev. B. 24, 3456 (1981)
P.Y. Tang, G.H. Huang, Q.L. Xie, J.L. Huang, F. Ning, Compos. Mater. Sci. 118, 117 (2016)
G.A. Northrop, J.P. Wolfe, Phys. Rev. B. 22, 6196 (1980)
B.A. Auld, inAcoustic Fields and Waves in Solids (John Wiley and Sons, New York 1973), Vol. 1
S. Liu, P. Hänggi, N. Li, J. Ren, B. Li, Phys. Rev. Lett. 112, 040601 (2014)
J. Sólyom, inFundamentals of the Physics of Solids (Springer Berlin Heidelberg, New York, 2007), Vol. 1
T. Poston, I.N. Stewart,Catastrophe Theory and its Applications (Pitman, London, 1978)
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Fu, H. Anisotropy affects the lattice waves and phonon distributions in GaAs. Eur. Phys. J. B 93, 199 (2020). https://doi.org/10.1140/epjb/e2020-10255-6
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DOI: https://doi.org/10.1140/epjb/e2020-10255-6