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The Effect of the Interaction of Excitations with the Interface between Nonlinear Media with a Switching on the Formation of Localized States

  • STATISTICAL, NONLINEAR, AND SOFT MATTER PHYSICS
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Abstract

Models of contacting media with stepwise nonlinearity are considered in the presence of interaction of excitations with the interface as a planar defect. In such media, an instantaneous switching from one level to another occurs when the field amplitude reaches a certain threshold value. New types of localized states with specific structure and properties are found. The structure of such states is determined by the formation of domains in the near-boundary regions, in which the values of certain parameters of the media differ from those in other regions. It is shown that, in the presence of interaction of excitations with the interface, new phenomena may occur that are related to the structural features of the field of localized states. The conditions for the existence of localized states are changed. The field can be maximized not only in the near-boundary region but also at the interface between a medium with stepwise nonlinearity and a linear medium. In the medium with stepwise nonlinearity containing a planar defect, the interaction of excitations with this defect leads to a decrease in the amplitude in the plane of the defect. As the intensity of interaction with the defect increases at a fixed localization energy, the domain width increases. It is shown that the threshold value of the total energy flow starting from which localized states exist and a domain is formed can be controlled by the intensity of the interaction of excitations with the interface.

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  1. Belgorod State Technological University named after V.G. Shukhov, 308012, Belgorod, Russia

    S. E. Savotchenko

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Translated by I. Nikitin

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Savotchenko, S.E. The Effect of the Interaction of Excitations with the Interface between Nonlinear Media with a Switching on the Formation of Localized States. J. Exp. Theor. Phys. 131, 468–480 (2020). https://doi.org/10.1134/S1063776120080051

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  • DOI: https://doi.org/10.1134/S1063776120080051

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