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An evolution of Colpitts VCO for simultaneous optimization of phase noise and FoM in GaAs technologies

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Abstract

This paper presents a novel co-optimization configuration to simultaneously improve phase noise and FoM in order to solve the long-existing issue of excellent phase noise and mediocre FoM in the light of GaAs technologies. Considering traditional GaAs based Colpitts/class-C VCOs, a first step is taken with the introduction of noise shifting structure while a second step is carried out with the presentation of Darlington pair. Afterwards, a detailed outline of pros and cons of five VCO topologies, including Colpitts/class-C/noise shifting (NS) Colpitts/noise shifting class-C/noise shifting Darlington-based (NSDB) class-C VCO, is given in theory and in practice while respective start-up conditions and capacitive feedback factors are derived mathematically. It can be found that iterative phase noise and FoM improvement is achieved in GaAs based VCOs above in a gradual manner. Furthermore, the output power is stabilized with a simple trick of two-stage Darlington-based topology and thus, the power-hungry buffer is avoided. Ultimately, three VCOs out of the five are fabricated in GaAs technologies while their specifications are thoroughly compared with previous research. The fabricated Colpitts VCO demonstrates a frequency tuning range of 3.59–3.69 GHz with a current consumption of 11.2 mA@5 V supply, a phase noise of − 130.1 to − 129.1 dBc/Hz at 1 MHz offset from the carrier and the output power is around − 5 to − 5.1 dBm. The fabricated noise shifting Colpitts VCO demonstrates a frequency tuning range of 3.58–3.67 GHz with a current consumption of 10.8 mA@5 V supply, a phase noise of − 132.4 to − 130.2 dBc/Hz at 1 MHz offset from the carrier and the output power is around − 2.5 to − 3.5 dBm. The fabricated Darlington-based class-C VCO demonstrates a frequency tuning range of 2.76–2.91 GHz with a current consumption of 9.5 mA@5 V supply, a phase noise of − 138.6 to − 135.9 dBc/Hz at 1 MHz offset from the carrier and the output power is around − 3.06 to − 4.18 dBm. To the best of the authors’ expertise, the proposed Darlington-based class-C VCO achieves both exceptional phase noise and FoM, which far outweigh that of existing GaAs ones.

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Acknowledgement

Many thanks to CDMG (Compact Device Modeling Group) group lead by Professor Jun Liu in Hangzhou Dianzi University for the valuable process assessment and modification work.

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Authors and Affiliations

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

    Jing-Yu Han, Yu Jiang & Gui-Liang Guo

  2. University of Chinese Academy of Sciences, Beijing, China

    Jing-Yu Han, Yu Jiang & Gui-Liang Guo

  3. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China

    Xu Cheng

  4. Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China

    Xu Cheng

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  1. Jing-Yu Han
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  2. Yu Jiang
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  3. Gui-Liang Guo
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  4. Xu Cheng
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Correspondence to Xu Cheng.

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Han, JY., Jiang, Y., Guo, GL. et al. An evolution of Colpitts VCO for simultaneous optimization of phase noise and FoM in GaAs technologies. Analog Integr Circ Sig Process 105, 441–457 (2020). https://doi.org/10.1007/s10470-020-01725-7

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