Abstract
An expression for the free energy of nucleus formation from liquid phase of a catalyst during growth of III–V semiconductor nanowires (NWs) via the vapor–liquid–solid (VLS) mechanism has been derived with allowance for depletion of the number of atoms of the group V element (As) in the drop as a result of the island growth during As deposition from the gas–vapor phase. Various regimes of island formation, including a regime with growth arrest at small As concentrations in the drop have been theoretically studied. It is established that the growth arrest takes place when the As concentration decreases to an equilibrium level. The obtained results can be used in simulations of the growth kinetics of III–V semiconductor NWs, statistics of their nucleation, and NW length distribution functions, as well as for modeling of the crystalline phase growth and doping processes.
Similar content being viewed by others
REFERENCES
A. Zhang, G. Zheng, and C. M. Lieber, Nanowires: Building Blocks for Nanoscience and Nanotechnology (Springer, New York, 2016).
V. G. Dubrovskii, in Semiconductors and Semimetals, Ed. by A. Fontcuberta i Morral, S. A. Dayeh, and C. Jagadish (Academic, Burlington, 2015), Vol. 93, p. 1.
E. Dimakis, U. Jahn, M. Ramsteiner, A. Tahraoui, J. Grandal, X. Kong, O. Marquardt, A. Trampert, H. Riechert, and L. Geelhaar, Nano Lett. 14, 2604 (2014).
G. E. Cirlin, A. D. Bouravleuv, I. P. Soshnikov, Yu. B. Samsonenko, V. G. Dubrovskii, E. M. Arakcheeva, E. M. Tanklevskaya, and P. Werner, Nanoscale Res. Lett. 5, 360 (2010).
R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, G. E. Cirlin, and V. M. Ustinov, J. Cryst. Growth 289, 31 (2006).
F. Matteini, V. G. Dubrovskii, D. Rüffer, G. Tütüncüoğlu, Y. Fontana, and A. Fontcuberta i Morral, Nanotecnology 26, 105603 (2015).
G. E. Cirlin, V. G. Dubrovskii, V. N. Petrov, N. K. Polyakov, N. P. Korneeva, V. N. Demidov, A. O. Golubok, S. A. Masalov, D. V. Kurochkin, O. M. Gorbenko, N. I. Komyak, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, M. V. Maximov, et al., Semicond. Sci. Technol. 13, 1262 (1998).
F. Glas, Phys. Rev. B 74, 121302(R) (2006).
K. W. Ng, W. S. Ko, T. T. D. Tran, R. Chen, M. V. Nazarenko, F. Lu, V. G. Dubrovskii, M. Kamp, A. Forchel, and C. J. Chang-Hasnain, ACS Nano 7, 100 (2013).
C.-Y. Wen, J. Tersoff, K. Hillerich, M. C. Reuter, J. H. Park, S. Kodambaka, E. A. Stach, and F. M. Ross, Phys. Rev. Lett. 107, 025503 (2011).
J. C. Harmand, G. Patriarche, F. Glas, F. Panciera, I. Florea, J.-L. Maurice, L. Travers, and Y. Ollivier, Phys. Rev. Lett. 121, 166101 (2018).
F. Panciera, Z. Baraissov, G. Patriarche, V. G. Dubrovskii, F. Glas, L. Travers, U. Mirsaidov, and J. C. Harmand, Nano Lett. 20, 1669 (2020).
D. Reguera, R. K. Bowles, Y. Djikaev, and H. J. Reiss, J. Chem. Phys. 118, 340 (2003).
J. W. P. Schmelzer and A. S. Abyzov, J. Chem. Phys. 134, 054511 (2011).
V. G. Dubrovskii, Cryst. Growth Des. 17, 2589 (2017).
F. Glas and V. G. Dubrovskii, Phys. Rev. Mater. (in press).
V. G. Dubrovskii, Tech. Phys. Lett. 46, 357 (2020).
V. G. Dubrovskii and H. Hijazi, Nanomaterials 10, 833 (2020).
V. G. Dubrovskii and J. Grecenkov, Cryst. Growth Des. 15, 340 (2015).
Funding
This work was supported in part by the Russian Foundation for Basic Research, projects nos. 18-02-40006, 19-52-53031, 20-52-16301, and 20-02-00351.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Additional information
Translated by P. Pozdeev
Rights and permissions
About this article
Cite this article
Dubrovskii, V.G., Sokolovskii, A.S. & Shtrom, I.V. Free Energy of Nucleus Formation during Growth of III–V Semiconductor Nanowires. Tech. Phys. Lett. 46, 889–892 (2020). https://doi.org/10.1134/S1063785020090187
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785020090187