Abstract
A new mechanism of low-temperature radiative recombination in bulk crystals of β-InSe and thin films exfoliated from them, resulting in the appearance of intense anti-Stokes luminescence with a photon energy of 2.54 eV, is revealed. The position of the corresponding spectral line is close to the exciton resonance of the k-space-direct band-to-band transition associated with the recombination of electrons at the bottom of the conduction band and holes in the Se pxy orbitals. The observed anti-Stokes emission presumably results from Auger recombination of k-space-indirect electron—hole pairs, which leads to the population of the lower lying states in the valence band. It is established that the relative intensity of anti-Stokes luminescence increases by more than two orders of magnitude in InSe films with thicknesses of several tens of nanometers as compared to bulk InSe.
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This work was supported by the Russian Science Foundation (project no. 18-72-00235, Section 2) and by the Russian Foundation for Basic Research (project no. 18-02-01129a, Sections 3 and 4).
Russian Text © The Author(s), 2020, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2020, Vol. 112, No. 3, pp. 160–164.
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Nikolaev, S.N., Chernopitsskii, M.A., Bagaev, V.S. et al. Anti-Stokes Luminescence of Bulk and Thin-Film β-InSe under Infrared Optical Excitation. Jetp Lett. 112, 145–149 (2020). https://doi.org/10.1134/S0021364020150084
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DOI: https://doi.org/10.1134/S0021364020150084