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Reliability Characteristics of Diamond-Like Carbon as Gate Insulator for Metal–Insulator–Semiconductor Application

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Abstract

This study presents the reliability of diamond-like carbon (DLC) ultrathin films fabricated by DC magnetron sputtering as the gate dielectric layer in metal–insulator–semiconductor (MIS) devices. Stress-induced leakage current (SILC) and time-dependent dielectric breakdown (TDDB) measurements were performed to determine the reliability of the devices. The MIS device with DLC film deposited at 1100-V bias exhibited little variation of SILC under different constant voltage stress times and had a long TDDB lifetime. The results indicate excellent reliability of DLC films used as gate dielectrics. Moreover, several soft breakdown events occurred during TDDB measuring. An extended percolation model was adopted for explanation of the current versus time characteristics.

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Funding

This research partially received funding from the Headquarters of University Advancement at National Cheng Kung University (no. D108-F2204), which is financially supported by the Ministry of Education, Taiwan, ROC.

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Authors and Affiliations

  1. Department of Physics, National Cheng Kung University, 701, Tainan, Taiwan

    S.-L. Tyan & Z.-W. Wu

  2. Department of Photonics, National Cheng Kung University, 701, Tainan, Taiwan

    S.-L. Tyan & H.-C. Tang

  3. Department of Electronic Engineering, Kun Shan University of Technology, 710, Tainan, Taiwan

    T.-S. Mo

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  1. S.-L. Tyan
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  2. H.-C. Tang
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  3. Z.-W. Wu
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  4. T.-S. Mo
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Correspondence to S.-L. Tyan.

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Tyan, SL., Tang, HC., Wu, ZW. et al. Reliability Characteristics of Diamond-Like Carbon as Gate Insulator for Metal–Insulator–Semiconductor Application. Phys. Solid State 62, 1845–1849 (2020). https://doi.org/10.1134/S1063783420100339

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  • DOI: https://doi.org/10.1134/S1063783420100339

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