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Quasi-Stationary Processes of the Dielectric Relaxation in Polycrystalline Thin PZT Films

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Abstract

The relaxation processes in polycrystalline PZT films formed on silicon substrates have been studied during a quasi-static change in an external electric field. The dielectric relaxation is shown to be characterized at least by three relaxation times depending on the direction of the self-polarization in the film, the value of the polarizing field, and also the PZT film annealing temperature.

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Authors and Affiliations

  1. Tver State University, 170100, Tver, Russia

    V. V. Ivanov, E. N. Golubeva & O. N. Sergeeva

  2. Tver State Agricultural Academy, 170100, Tver, Russia

    O. N. Sergeeva & G. M. Nekrasova

  3. Ioffe Institute, 194021, St. Petersburg, Russia

    I. P. Pronin

  4. National University of Science and Technology MISiS, 119049, Moscow, Russia

    D. A. Kiselev

Authors
  1. V. V. Ivanov
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  2. E. N. Golubeva
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  3. O. N. Sergeeva
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  4. G. M. Nekrasova
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  5. I. P. Pronin
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  6. D. A. Kiselev
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Correspondence to O. N. Sergeeva.

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Translated by Yu. Ryzhkov

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Ivanov, V.V., Golubeva, E.N., Sergeeva, O.N. et al. Quasi-Stationary Processes of the Dielectric Relaxation in Polycrystalline Thin PZT Films. Phys. Solid State 62, 1868–1872 (2020). https://doi.org/10.1134/S1063783420100133

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  • DOI: https://doi.org/10.1134/S1063783420100133

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