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Van der Waals layered ferroelectric CuInP2S6: Physical properties and device applications

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Abstract

Copper indium thiophosphate, CuInP2S6, has attracted much attention in recent years due to its van der Waals layered structure and robust ferroelectricity at room temperature. In this review, we aim to give an overview of the various properties of CuInP2S6, covering structural, ferroelectric, dielectric, piezoelectric and transport properties, as well as its potential applications. We also highlight the remaining questions and possible research directions related to this fascinating material and other compounds of the same family.

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Acknowledgements

This review was supported by the National Natural Science Foundation of China (NSFC) (Grant Nos. 11904176, 61874060, 61911530220, U1932159, and 11774249), the Natural Science Foundation of Jiangsu Higher Education Institutions (Grant No. 19KJB140004), the startup found from NJUPT (Grant Nos. NY219028 and NY217118), NSF of Jiangsu Province (Grant Nos. BK20181388 and BK20171209), and the Key University Science Research Project of Jiangsu Province (Grant No. 18KJA140004). The authors also gratefully acknowledge the startup fund from Soochow University, Priority Academic Program Development (PAPD) of Jiangsu Higher Education Institutions, Jiangsu Specially-Appointed Professor program, and the startup grant from Southern University of Science and Technology.

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China

    Shuang Zhou & Yong Pu

  2. Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China

    Lu You & Hailin Zhou

  3. Department of Physics, Southern University of Science & Technology, Shenzhen, 518055, China

    Zhigang Gui & Junling Wang

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  1. Shuang Zhou
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Correspondence to Lu You or Junling Wang.

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Zhou, S., You, L., Zhou, H. et al. Van der Waals layered ferroelectric CuInP2S6: Physical properties and device applications. Front. Phys. 16, 13301 (2021). https://doi.org/10.1007/s11467-020-0986-0

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