Intermittent growth for InAs quantum dot on GaAs(001)
Introduction
High-density arrays of quantum dots (QDs) are easily prepared by using Stranski–Krastanov (SK) growth mode of molecular beam epitaxy (MBE) [1], [2], [3]. Such QDs are strong candidates for advanced semiconductor quantum devices [4], [5], [6]. However, the method of precise controlling of QD size, density, and distribution depending on applications are important and necessary. So many investigations have been carried out on QDs forming process. Ramachandran et al. reported small 3D structures appearing just before QDs nucleation [7]. But, they observed the structures after stopping MBE growth and cooling down to the room temperature. This means it is difficult to determine when the small 3D structures form.
Tsukamoto et al. observed InAs QD formation processes at 430 °C by using the STMBE system [8] which is equipped with a scanning tunneling microscope (STM) inside a MBE growth chamber, performing true in situ imaging during the MBE growth. This can observe the characteristics of the surface reconstruction before the QD nucleation. Moreover, Honma et al. observed InAs QD formation processes at 500 °C during continuous STMBE growth [9]. In order to understand factors affecting QD nucleation sites, it is necessary to investigate more details of the surface structure before QD nucleation.
To understand the relationship between the QD formation and the surface reconstruction, it is necessary to focus on the thermal equilibrium state of the surface. The ordinary MBE growth keeps the surface non-equilibrium due to continuous In supply, and it is difficult to know the relationship between the surface and the QD formation. In order to reveal this relationship, it is important to keep the surface in thermal equilibrium state which directly leads to QD formation. Here, we have developed a new method of QD formation with continuously observing the same area by repeating to supply a small amount of InAs and to anneal under As4 flux (intermittent deposition method). In this method, In adatoms migration is enhanced during the annealing period compared to the continuous growth, which is expected to stabilize the surface in the thermal equilibrium state. This is similar to migration enhancement epitaxy reported by Horikoshi et al. [10] but they applied it to smooth the surface at low temprature growth.
In this paper, we report correlations between In adatoms migration and QD nucleation, applying the intermittent growth to regulate the surface reconstructions by the STMBE system. And we analyse the time evolution of reflection high energy electron diffraction (RHEED) pattern reflected to the surface morphology.
Section snippets
Experimental setup
All samples were prepared from the same type of epi-ready GaAs(001) just-cut substrate. After the samples were introduced into the load-lock chamber, the following procedures were performed under the same conditions: afrer pre-baking at 300 °C for 30 min in the load-lock chamber, transporting to the STMBE chamber, removing surface oxide layer at 580 °C, a GaAs buffer layer was grown at 560 °C using As4/Ga flux ratio of 89 measured by using a flux monitor. After growing the GaAs buffer layer,
Results and discussion
Figure 2(a-c) shows STM images of GaAs(001) surface after 1.15, 1.38, and 1.61 ML InAs supply, respectively. We can confirm surface morphologies before InAs QDs formation in the Fig. 2(a). There were 1.0 ML height islands but no QDs appeared yet. The InAs QDs were formed from 1.15 to 1.38 ML. The STM image shifted to the lower right, still showing the same particular area indicated by red broken rectangles. There were a few larger QDs as shown. This suggests that these QDs might be formed
Conclusion
We demonstrated intermittent growth of InAs QDs on GaAs(001) at 500 °C. We have found that the initial QDs formation occurred from 1.15 to 1.38 ML with intermittent In supply, which was much smaller than that of ordinary continuous deposition (1.66 ML). Moreover, the initial QDs mainly appeared on the terraces while they mainly appear on the step edges by ordinary InAs growth at 500 °C. This indicates that the intermittent In supply and annealing affected the surface atomic structures of
Declaration of Competing Interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
References (19)
- et al.
New MBE growth method for InSb quantum well boxes
J. Cryst. Growth
(1991) - et al.
Atomic-level in situ real-space observation of Ga adatoms on GaAs(001)()-As surface during molecular beam epitaxy growth
J. Cryst. Growth
(1999) - et al.
Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy
Surf. Sci.
(1997) - et al.
Atomistic behaviour of ()-reconstructed areas of InAs-GaAs(001) surface at the growth condition
J. Cryst. Growth
(2017) - et al.
Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)
J. Cryst. Growth
(2013) - et al.
Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth
J. Cryst. Growth
(2017) - et al.
Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs(001) substrate
J. Cryst. Growth
(2020) - et al.
Growth by molecular beam epitaxy and characterization of InAs/GaAs strained - layer superlattices
Appl. Phys. Lett.
(1985) - et al.
Role of strain and growth conditions on the growth front profile of InxGa1-xAs on GaAs during the pseudomorphic growth regime
Appl. Phys. Lett.
(1988)
Cited by (1)
Effect of surface structural change on adsorption behavior on InAs wetting layer surface grown on GaAs(001) substrate
2021, Journal of Crystal Growth