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Realization of Precise Tuning the Superconducting Properties of Mn-Doped Al Films for Transition Edge Sensors

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Abstract

Magnetic impurities in metallic superconductors are important for both fundamental and applied sciences. In this study, we focused on dilute Mn-doped aluminum (AlMn) films, which are common superconducting materials used to make transition edge sensors and other superconducting devices. We developed a multi-energy ion-implantation technique to make AlMn films. Compared with frequently used sputtering techniques, ion-implantation provides more precise control of the Mn doping concentration in the AlMn films. It enables us to fabricate reliably AlMn films with a different superconducting transition temperature (Tc) that can match a variety of application needs. We also found that the superconducting transition temperature drops with increasing film thickness for samples with the same nominal concentration of Mn dopants. The dependence of Tc on the film thickness is attributed to the increasing implantation energy. By quantitatively analyzing the curves of Tc versus the Mn doping concentration, we propose that Mn dopants act as magnetic impurities and suppression of superconductivity is counteracted by the antiferromagnetic Ruderman–Kittel–Kasuya–Yosida interaction among Mn dopants, which is influenced by the defects induced in the ion-implantation process.

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Acknowledgements

This work is supported by the National Key Research and Development Program of China under Grant No. 2017YFA0304000, by the Chinese National Science Foundation under Grant Nos. 11653004, 11705262, 61874128, 61851406, U1732268 and U1632272, by Frontier Science Key Program of CAS (No. QYZDY-SSW-JSC032) and by Program of Shanghai Academic Research Leader (No. 19XD1404600). The nanofabrication work is supported by the superconducting electronics facility (SELF) of Shanghai institute of microsystem and information technology. We thank Wentao Wu, Hubing Wang and Qi Jia for their assistance in the experiments. We thank Jiaxing Ding from Shanghai Jiaotong University for her support in the SIMS measurements and data analysis. We thank Helmholtz-Zentrum Dresden-Rossendorf (HZDR) for the implantation work.

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Author notes

  1. Yue Lv and Hao Huang are contributed equally to this work.

Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China

    Yue Lv, Hao Huang, Tiangui You, Xin Ou, Bo Gao & Zhen Wang

  2. CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, 200050, China

    Yue Lv, Hao Huang, Bo Gao & Zhen Wang

  3. School of Physics and Technology, Wuhan University, Wuhan, 430072, China

    Feng Ren

  4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Yue Lv, Hao Huang, Tiangui You, Xin Ou, Bo Gao & Zhen Wang

  5. School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China

    Hao Huang

Authors
  1. Yue Lv
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  2. Hao Huang
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Correspondence to Xin Ou or Bo Gao.

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Lv, Y., Huang, H., You, T. et al. Realization of Precise Tuning the Superconducting Properties of Mn-Doped Al Films for Transition Edge Sensors. J Low Temp Phys 202, 71–82 (2021). https://doi.org/10.1007/s10909-020-02534-y

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  • DOI: https://doi.org/10.1007/s10909-020-02534-y

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