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Studies on Charge Carrier Transport in an Injection Laser with Frequency Modulation of the Optical Radiation

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Abstract

One of the promising approaches to solve the problem of increasing the efficiency for interelement connections consists in the use of integrated optical switching systems, whose main elements represent injection lasers with functionally integrated optical radiation modulators. Injection lasers make it possible to modulate the laser radiation by subpicosecond controlling pulses at a constant pumping current, as well as making it possible to implement the sources and modulators of optical radiation in a united AIIIBV nanoheterostructure with second-type heterojunctions. This work is devoted to the studies concerning the transport of charge carriers within a functionally integrated modulator laser with internal frequency modulation of the generated optical radiation using a proposed two-dimensional diffusion-drift model and a numerical simulation technique. The results of the numerical simulation of charge carrier transport in a modulator laser when the pumping current is switched on, as well as under pulsed variation of the controlling voltage, take the structural features, the transport effects, the mechanisms of stimulated and spontaneous radiative recombination, and the photon lifetime into account. It is shown that the maximum modulation frequency of laser radiation is determined by the subpicosecond time of the controlled spatial relocation of the charge-carrier density maxima in the quantum zones of the modulator laser, as well as by the photon lifetime in the laser resonator, and corresponds to the terahertz range. To increase the maximum modulation frequency, it is necessary to reduce the photon lifetime in the active zone of the modulator laser to values lower than 3 ps by changing the resonator’s parameters in a corresponding manner. The proposed model and the method of numerical simulation make it possible to optimize the parameters of a functionally integrated modulator laser, and to provide the required relationships between the maximum modulation frequency of the optical radiation, the modulation coefficient, and the density of the threshold pumping current.

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REFERENCES

  1. Fang, A.W., Park, H., and Cohen, O., et al., Electrically pumped hybrid AlGaInAs-silicon evanescent laser, Opt. Express, 2006, vol. 14, no. 20, pp. 9203–9210.

    Article  Google Scholar 

  2. Bolkhovityanov, Yu.B. and Pchelyakov, O.P., GaAs epitaxy on Si substrates: modern status of research and engineering, Phys.-Usp., 2008, vol. 51, no. 5, pp. 437–456.

    Article  Google Scholar 

  3. Ozyazici, M.S., The complete electrical equivalent circuit of a double heterojunction laser diode using scattering parameters, J. Optoelectron. Adv. Mater., 2004, vol. 6, no. 4, pp. 1243–1253.

    Google Scholar 

  4. Malyshev, V.A., Osnovy kvantovoi elektroniki i lazernoi tekhniki (Fundamentals of Quantum Electronics and Laser Technology), Moscow: Vysshaya Shkola, 2005.

  5. Konoplev, B.G., Ryndin, E.A., and Denisenko, M.A., The method of constructing integrated switching optical systems of multicore UBIS, Izv. YuFU, Tekh. Nauki, 2011, no. 4(117), pp. 21–27.

  6. Konoplev, B.G., Ryndin, E.A., and Denisenko, M.A., Integrated injection laser with rearrangement of wave functions of carriers, Vestn. Yuzh. Nauch. Tsentra RAN, 2010, vol. 6, no. 3, pp. 5–11.

    Google Scholar 

  7. Konoplev, B.G., Ryndin, E.A., and Denisenko, M.A., Integral injection laser with controlled relocation of the maximum amplitude of the wave functions of charge carriers, RF Patent No. 2400000, Byull. Izobret., 2010, no. 26.

  8. Konoplev, B.G., Ryndin, E.A., and Denisenko, M.A., Components of integrated microwave circuits based on complementary coupled quantum regions, Russ. Microelectron., 2015, vol. 44, no. 3, pp. 190–196.

    Article  Google Scholar 

  9. Konoplev, B.G., Ryndin, E.A., and Denisenko, M.A., Injection laser with a functionally integrated frequency modulator based on spatially shifted quantum wells, Tech. Phys. Lett., 2013, vol. 39, no. 11, pp. 986–989.

    Article  Google Scholar 

  10. Ryndin, E.A. and Denisenko, M.A., A functionally integrated injection laser-modulator with the radiation frequency modulation, Russ. Microelectron., 2013, vol. 42, no. 6, pp. 360–362.

    Article  Google Scholar 

  11. Konoplev, B.G., Ryndin, E.A., and Denisenko, M.A., Integral injection laser with modulated radiation frequency by controlled relocation of the maximum amplitude of the wave functions of charge carriers, RF Patent No. 2520947, Byull. Izobret., 2014, no. 18.

  12. Gorbatsevich, A.A., Kapaev, V.V., Kopaev, Yu.V., and Kremlev, V.Ya., Quantum devices based on the relocation of wave functions in heterostructures, Mikroelektronika, 1994, vol. 23, no. 5, pp. 17–26.

    Google Scholar 

  13. Gorbatsevich, A.A., Kapaev, V.V., Kopaev, Yu.V., and Kremlev, V.Ya., Wave-function-rearrangement quantum devices, Phys. Low-Dim. Struct., 1994, nos. 4–5, pp. 57–62.

  14. Konoplev, B.G. and Ryndin, E.A., A study of the transport of charge carriers in coupled quantum regions, Semiconductors, 2008, vol. 42, no. 13, pp. 1462–1468.

    Article  Google Scholar 

  15. Ryndin, E.A. and Denisenko, M.A., Model of functionally integrated injection modulator lasers for integrated optical switching systems, Izv. Vyssh. Uchebn. Zaved., Elektron., 2012, no. 6 (98), pp. 26–35.

  16. Minkin, V.I., Bistable organic, organometallic, and coordination compounds for molecular electronics and spintronics, Russ. Chem. Bull., 2008, vol. 57, no. 4, pp. 687–717.

    Article  Google Scholar 

  17. Abramov, I.I., Problems and principles of physics and simulation of micro- and nanoelectronics devices. II. The models of semiclassical approach, Nano-Mikrosist. Tekh., 2006, no. 9, pp. 26–36.

  18. Konoplev, B.G., Ryndin, E.A., and Denisenko, M.A., Diffusion-drift model of the transport of charge carriers and photons in injection lasers, Tech. Phys. Lett., 2015, vol. 41, no. 6, pp. 587–590.

    Article  Google Scholar 

  19. Zarifkar, A., Ansari, L., and Moravvej-Farshi, M.K., An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects, Fiber Integr. Optics, 2009, no. 28, pp. 249–267.

    Article  Google Scholar 

  20. Palankovski, V. and Quay, R., Analysis and Simulation of Heterostructure Devices, Wien: Springer, 2004.

    Book  Google Scholar 

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Funding

The work was financially supported by the Development Program of the Southern Federal University until 2021 (project VnGr-07/2017-10).

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Correspondence to E. A. Ryndin.

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Translated by O. Polyakov

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Konoplev, B.G., Ryndin, E.A. & Pisarenko, I.V. Studies on Charge Carrier Transport in an Injection Laser with Frequency Modulation of the Optical Radiation. Russ Microelectron 48, 435–442 (2019). https://doi.org/10.1134/S1063739719070072

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  • DOI: https://doi.org/10.1134/S1063739719070072

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