Floquet dynamics of disordered bands with isolated critical energies

Sriram Ganeshan, Kartiek Agarwal, and R. N. Bhatt
Phys. Rev. B 102, 134212 – Published 27 October 2020

Abstract

We investigate localization properties of driven models which exhibit a subextensive number of extended states in the static setting. We consider instances where the extended modes are or are not protected by topological considerations. To this end, we contrast the strongly driven, disordered, lowest Landau level, which we refer to as the random Landau model (RLM), with the random dimer model (RDM); the RDM also has a subextensive set of delocalized modes in the middle of the spectrum whose origin is not topological. We map the driven models on to a higher-dimensional effective model and numerically compute the localization length as a function of disorder strength, drive amplitude, and frequency using the recursive Green's function method. Our numerical results indicate that, in the presence of a strong drive (low frequency and/or large drive amplitude), the topologically protected RLM continues to exhibit a spectrum with both localized and delocalized (or critical) modes, but the spectral range of delocalized modes is enhanced by the driving. This occurs due to an admixture of the localized modes with extended modes arising due to the topologically protected critical energy in the middle of the spectrum. On the other hand, in the RDM, a weak drive immediately localizes the entire spectrum. This occurs in contrast to the naive expectation from perturbation theory that mixing between localized and delocalized modes generically enhances the delocalization of all modes. Our work highlights the importance of the origin of the delocalized modes in the localization properties of the corresponding Floquet model.

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  • Received 23 February 2020
  • Revised 8 September 2020
  • Accepted 18 September 2020

DOI:https://doi.org/10.1103/PhysRevB.102.134212

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sriram Ganeshan1, Kartiek Agarwal2,3, and R. N. Bhatt2,4

  • 1Department of Physics, City College, City University of New York, New York, New York 10031, USA
  • 2Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
  • 3Department of Physics, McGill University, Montréal, Québec, Canada, H3A 2T8
  • 4School of Natural Sciences, Institute for Advanced Study, Princeton, New Jersey 08540, USA

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Issue

Vol. 102, Iss. 13 — 1 October 2020

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