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AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material

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Abstract

Metal–Insulator–Metal (MIM) capacitors based on high-k oxides require stability with the applied electric field. However, experiment reveals a nonlinear behavior of capacitance with ac or dc bias. In this work, we measure capacitance–voltage nonlinearities for Au/10-nm HfO2/M (where M = TiN, Pt, W, and AlCu alloys). It is observed that ac capacitance is strongly dependent on the bottom electrode material. This dependency is discussed through the correlated barrier hopping (CBH) model. Accordingly, the ac nonlinearity is ascribed to the polarization of isolated defect pairs, which in turn increase as the maximum barrier height decreases. This induces higher nonlinearity as compared to the dc one. For the dc bias, oxygen affinity of active metal electrode may describe the origin of dc nonlinearities.

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References

  1. Q. Zhang, Integr. Ferroelectr. 19, 112 (2019)

    Article  Google Scholar 

  2. K.-Y. Chen, T.-C. Chen, R.-W. Kao, Y.-X. Lin, K.-Y. Hsieh, Wu Yung-Hsien, IEEE Trans. Nanotechnol. 18, 532 (2019)

    Article  CAS  Google Scholar 

  3. P. Gonon, C. Vallée, Appl. Phys. Lett. 96, 233504 (2010)

    Article  Google Scholar 

  4. C. Fang, M. Wang, P. Han, Y.-Q. Cao, D. Wu, A.-D. Li, IEEE Elect. Dev. Lett. 40, 682 (2019)

    Article  CAS  Google Scholar 

  5. C.H. Wenger, M. Lukosius, H.-J. Müssig, G. Ruhl, S. Pasko, C.H. Lohe, J. Vac. Sci. Technol. B 27(1), 286 (2009)

    Article  CAS  Google Scholar 

  6. K. Robin, G.R. Erlend, K. Pawan, S.V. Senthil, K.S. Satinder, S. Jörg, IEEE Trans. Device Mater. Reliab. 17, 1 (2017)

    Google Scholar 

  7. M. Kahn, C. Vallée, E. Defay, C. Dubourdieu, M. Bonvalot, S. Blonkowski, J.R. Plaussu, P. Garrec, T. Baron, Microelectron. Reliab. 47, 773 (2007)

    Article  CAS  Google Scholar 

  8. E.O. Filatova, A.S. Konashuk, J. Phys. Chem. C 119(35), 20755 (2015)

    Article  CAS  Google Scholar 

  9. H. Hu, C. Zhu, Y.F. Lu, Y.H. Wu, T. Liew, M.F. Li, B.J. Cho, W.K. Choi, N. Yakovlev, J. Appl. Phys. 94, 551 (2003)

    Article  CAS  Google Scholar 

  10. O. Khaldi, P. Gonon, C. Vallée, C. Mannequin, M. Kassmi, A. Sylvestre, F. Jomni, J. App. Phys. 116, 084104 (2014)

    Article  Google Scholar 

  11. L. Liu, Y. Huang, C. Su, L. Fang, M. Wu, C. Hu, H. Fan, Appl. Phys. A 104, 1047 (2011)

    Article  CAS  Google Scholar 

  12. P. Ren, H. Fan, X. Wang, Appl. Phys. Lett. 103, 152905 (2013)

    Article  Google Scholar 

  13. M. Kassmi, F. Jomni, P. Gonon, O. Khaldi, L. Latu-Romain, C. Mannequin, A. Bsiesy, S. Basrour, B. Yangui, J. Phys. D: Appl. Phys. 49, 165502 (2016)

    Article  Google Scholar 

  14. T. Remmel, R. Ramprased and J. Walls, in 41st IEEE International Reliability Physics Symposium (Piscataway, NJ: IEEE, 2003), p. 277

  15. O. Khaldi, F. Jomni, P. Gonon, C. Vallée, C. Mannequin, B. Yangui, Phys. Status Solidi RRL 8, 634 (2014)

    Article  CAS  Google Scholar 

  16. C. Mannequin, P. Gonon, C. Vallee, L. Latu-Romain, A. Bsiesy, H. Grampeix, A. Salaun, V. Jousseaume, J. Appl. Phys. 112, 074103 (2012)

    Article  Google Scholar 

  17. C. Jorel, C. Vallée, E. Gourvest, B. Pelissier, M. Kahn, M. Bonvalot, P. Gonon, J. Vac. Sci. Technol. B 27, 378 (2009)

    Article  CAS  Google Scholar 

  18. D. Schomemaker, T. Shirkey, Phys. Rev. B 6, 1572 (1972)

    Article  Google Scholar 

  19. A.M. Saleh, S.M. Hraibat, R.M.L. Kitaneh, M.M. Abu-Samreh, S.M. Musameh, J Semicond 33, 082002 (2012)

    Article  Google Scholar 

  20. O. Sharia, K. Tse, J. Robertson, A.D. Alexander, Phys. Rev. B 79, 125305 (2009)

    Article  Google Scholar 

  21. P. Gonon and C. Vallée, in IEEE 11th International Conference on the Properties and Applications of Dielectric Materials (ICPADM), (IEEE, 2015), p. 636

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Authors and Affiliations

  1. Université de Tunis El Manar, LMOP (LR99ES17), 2092, Tunis, Tunisia

    Othmen Khaldi & Fathi Jomni

  2. Université Grenoble Alpes, LTM, 38000, Grenoble, France

    Patrice Gonon & Christophe Vallée

Authors
  1. Othmen Khaldi
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  2. Fathi Jomni
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  3. Patrice Gonon
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  4. Christophe Vallée
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Correspondence to Othmen Khaldi.

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Khaldi, O., Jomni, F., Gonon, P. et al. AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material. J Mater Sci: Mater Electron 31, 19036–19043 (2020). https://doi.org/10.1007/s10854-020-04440-1

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  • DOI: https://doi.org/10.1007/s10854-020-04440-1

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