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Packing fraction, bond valence and crystal structure of AVO4 (A = Eu, Y) microwave dielectric ceramics with low permittivity

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Abstract

The A3+B5+O4 binary oxides have a variety of different structures—monoclinic, and tetragonal—making them suitable candidates for laser hosts, energy storage, microwave dielectric substrates, etc. In this work, we prepared two tetragonal AVO4 (A = Eu, Y) ceramics with zircon structure. The powder X-ray diffraction (XRD) has been used to study phase purity of the zircon-type AVO4 (A = Eu, Y) ceramics. There was a significant correlation between microwave dielectric properties and relative density. Dense EuVO4 and YVO4 ceramics sintered at 1180 °C and 1240 °C exhibited promising microwave dielectric properties with εr = 11.6 and 9.9, Q × f = 46,862 GHz and 56,174 GHz, τf = − 49.6 ppm/°C and − 43.7 ppm/°C, respectively. In addition, the relationship between microwave dielectric properties and crystal structure of AVO4 (A = Eu, Y) ceramics were discussed by packing fraction and bond valence theory in detail.

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Acknowledgements

This work was supported by the Natural Science Foundation of China (21761008), the Natural Science Foundation of Guangxi Zhuang Autonomous Region (No. 2018GXNSFAA138175), the Project of Scientific Research and Technical Exploitation Program of the Guangxi Zhuang Autonomous Region (Nos. AA18118008, AA18118034 and AA18118023), Project of Education Department of Guangxi Zhuang Autonomous Region (No. 2018KY0255).

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Correspondence to Liang Fang or Jie Li.

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Chen, J., Fang, L., Li, J. et al. Packing fraction, bond valence and crystal structure of AVO4 (A = Eu, Y) microwave dielectric ceramics with low permittivity. J Mater Sci: Mater Electron 31, 19180–19187 (2020). https://doi.org/10.1007/s10854-020-04454-9

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  • DOI: https://doi.org/10.1007/s10854-020-04454-9

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