Abstract
The semiconductor packaging field is evolving rapidly due to strong competition in customer demands for increased functionality and performance, further miniaturization, heightened reliability and lower costs. The lifetime reliability and sequential performance of solid-state products are mainly based on the device junction temperature (Tj). The main concerns of efficient thermal management in heat source-based electronic packages are controlling and reducing the device junction temperature and total thermal resistance (Rth). The optimization of process parameters to develop an anodic aluminium oxide nanopore (AAO-np) structure on an Al5052 alloy substrate using an electrochemical process (two-step anodization) is proposed based on the Taguchi orthogonal array (L9). The four major parameters are the electrolyte, anodization time, bath temperature, and applied voltage, which are varied at three different levels. This experiments aim to finalize suitable process parameters and their levels towards optimum Rth and Tj. The morphology of the step-wise preparation of AAO-np structure is discussed for the optimized conditions of 0.3 M oxalic acid, a 3 h anodization time, a 30 V applied voltage, and a bath at room temperature. The resulting AAO-np structure has a pore diameter of 40 to 55 nm and a height of 6 to 7 μm. This formation significantly reduces Rth by 24.58% and Tj by 24.66% for the electronic package compared to a bare Al substrate.
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Acknowledgements
The authors would like to thank WDC–USM (MIDA grant) for financial assistance. In addition, the authors would like to acknowledge TMRL Laboratory–School of Physics (USM), SERC (USM) and Western Digital Corporation for providing the characterization facilities. Finally, the authors thank School of Materials and Mineral Resources Engineering for providing lab facilities.
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Sundararajan, M., Subramani, S., Devarajan, M. et al. Optimization of process parameters of anodic aluminium oxide using an orthogonal array technique for thermal management applications. J Mater Sci: Mater Electron 31, 18706–18720 (2020). https://doi.org/10.1007/s10854-020-04412-5
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DOI: https://doi.org/10.1007/s10854-020-04412-5