Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2,CO,NO,CO2, NO2, and CH4 on the van der Waals layered Sn3O4 semiconductor

Rafael L. H. Freire, Marcelo O. Orlandi, and Juarez L. F. Da Silva
Phys. Rev. Materials 4, 104002 – Published 2 October 2020
PDFHTMLExport Citation

Abstract

We report an atomistic investigation, based on density functional theory calculations within the D3 van der Waals correction, of the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the semiconductor Sn3O4(010) monolayer surface. Except for NO2 and NO molecules, the adsorption energies are from 64meV (H2) up to 167meV (CO2) with the molecule-surface distances larger than 3.30Å for all molecules, and hence, minor effects were observed on the Sn3O4(010) surface electronic structure upon adsorption. NO2 has the largest adsorption energy (525meV), which can be explained by closer approach of the two O atoms towards the surface, while NO binds to the surface with about half of the NO2 adsorption energy (e.g., 279meV). From Bader analysis, we found substantial charge transfer from the surface to the molecules, 0.52e (NO2) and 0.23e (NO), which is consistent with the smaller distances to the surface, 2.46 and 2.82Å, respectively. Thus, those results suggest an improved detection performance of Sn3O4 towards NO2, which can help to design sensor devices based on the Sn3O4(010) monolayers.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 5 July 2020
  • Revised 29 August 2020
  • Accepted 15 September 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.104002

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Rafael L. H. Freire1,*, Marcelo O. Orlandi2,†, and Juarez L. F. Da Silva3,‡

  • 1Beijing Computational Science Research Center, Beijing 100193, People's Republic of China
  • 2Department of Engineering, Physics and Mathematics, São Paulo State University (UNESP), 14800-060, Araraquara, SP, Brazil
  • 3São Carlos Institute of Chemistry, University of São Paulo, P.O. Box 780, 13560-970, São Carlos, SP, Brazil

  • *Present address: São Paulo State University Department of Engineering, Physics and Mathematics, São Paulo State University, 14800-060, Araraquara, SP, Brazil; freire.rafaelheleno@csrc.ac.cn
  • marcelo.orlandi@unesp.br
  • juarez_dasilva@iqsc.usp.br

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 4, Iss. 10 — October 2020

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Materials

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×