Abstract
The effect of bismuth on the structural perfection of elastically strained AlGaInSbBi epitaxial layers grown on InSb substrates in a temperature gradient field is studied. The optimal parameters of the growth process of AlGaInSbBi(InSb) epitaxial layers with high structural perfection and minimum roughness are revealed: 0.05 < \(x_{{{\text{Bi}}}}^{s}\) < 0.2 mole fraction, temperature gradient 10 K/cm ≤ G ≤ 30 K/cm, liquid-zone thickness 60 ≤ l ≤ 100 µm, and the temperature range 623 K ≤ Т ≤ 823 K.
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Funding
The investigation of the distribution profiles of the components, the layer morphology, and photoluminescence was supported by the Russian Scientific Foundation (grant no. 19-79-10024). The results of structural analysis and the study of elastic stresses were obtained with the support of the Russian Foundation for Basic Research (grant no. 20-08-00108).
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Translated by L. Chernikova
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Alfimova, D.L., Lunina, M.L., Lunin, L.S. et al. Effect of Bismuth on the Structural Perfection of Elastically Strained AlGaInSbBi Epitaxial Layers Grown on InSb Substrates. J. Surf. Investig. 14, 771–776 (2020). https://doi.org/10.1134/S1027451020040217
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DOI: https://doi.org/10.1134/S1027451020040217