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Improved properties of Pb(Zr0.52Ti0.48)O3 films by hot plate annealing on LaNiO3 bottom electrode

  • Original Paper: Functional coatings, thin films and membranes (including deposition techniques)
  • Published:
Journal of Sol-Gel Science and Technology Aims and scope Submit manuscript

Abstract

Pb(Zr0.52Ti0.48)O3 (PZT) perovskite ferroelectric thin films were fabricated on LaNiO3 buffer silicon substrate by sol–gel spin coating technique. The thickness of PZT films was about 150 nm, and the thickness of LNO films as electrodes was about 120 nm. The prepared PZT thin films were annealed by hot plate annealing and conventional electric furnace annealing at various temperatures for 30 min. The microstructure of annealed films was analyzed by different techniques. The obtained results demonstrated that the perovskite phase can be achieved in films by both methods of annealing. Structural and morphological characterizations substantiated that hot plate annealing method can facilitate the formation of perovskite phase of PZT films than the electric furnace annealing. Consequently, the films annealed using hot plate exhibited more excellent electrical properties. The higher dielectric permittivity, remnant polarization, and the lower dielectric dissipation were observed for the thin films annealed at 550 °C by the hot plate. The values of remnant polarization and coercive field of PZT annealed on the hot plate were 36.4 μC/cm2 and 168 kV/cm, respectively. These results demonstrated that the crystallization of ferroelectric PZT films was improved by hot plate annealing.

Highlights

  1. 1.

    PZT thin films were fabricated on LaNiO3 buffer by sol–gel technique.

  2. 2.

    The prepared PZT thin films were annealed by two different methods.

  3. 3.

    We controlled the same preparation process for the samples.

  4. 4.

    Annealing on a hot plate can favor the crystal growth of PZT films.

  5. 5.

    The films annealed on the hot plate revealed better electrical properties.

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Acknowledgements

This work has been financially supported by the Key Scientific Research Foundation in Henan Province (No. 19B430005), the National Natural Science Foundation of China (Nos. 51402091, 61901161, 11847136), the Special Scientific Research Foundation in Henan Normal University (No. 20180543), and the National University Student Innovation Program (No. 20160098).

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  1. These authors contributed equally: S. Q. Yin, A. D. Liu, Y. Y. Zhang

Authors and Affiliations

  1. Laboratory of Functional Materials, School of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, 453007, China

    S. Q. Yin, A. D. Liu, Y. Y. Zhang, K. S. Venkatesh, M. Manikandan, Y. C. Shi, P. Y. Chen, M. Z. Hou, S. Y. Shang, J. Shang & X. W. Wang

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  1. S. Q. Yin
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Yin, S.Q., Liu, A.D., Zhang, Y.Y. et al. Improved properties of Pb(Zr0.52Ti0.48)O3 films by hot plate annealing on LaNiO3 bottom electrode. J Sol-Gel Sci Technol 96, 83–90 (2020). https://doi.org/10.1007/s10971-020-05378-w

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