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Charge, spin and valley Hall effects in disordered graphene

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La Rivista del Nuovo Cimento Aims and scope

Summary

The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of e2/h, has been the first fascinating manifestation of the topological state of matter driven by magnetic field and disorder, and related to the formation of non-dissipative current flow. Throughout the 2000’s, several new phenomena such as the spin Hall effect and the quantum spin Hall effect were confirmed experimentally for systems with strong spin-orbit coupling effects and in the absence of external magnetic field. More recently, the Zeeman spin Hall effect and the formation of valley Hall topological currents have been introduced for graphene-based systems, under time-reversal or inversion symmetry-breaking conditions, respectively. This review presents a comprehensive coverage of all these Hall effects in disordered graphene from the perspective of numerical simulations of quantum transport in two-dimensional bulk systems (by means of the Kubo formalism) and multiterminal nanostructures (by means of the Landauer-Büttiker scattering and non-equilibrium Green’s function approaches). In contrast to usual two-dimensional electron gases in semiconductor heterostructures, the presence of defects in graphene generates more complex electronic features such as electron-hole asymmetry, defect-induced resonances in the electron density of states or percolation effect between localized impurity states, which, together with extra degrees of freedom (sublattice pseudospin and valley isospin), bring a higher degree of complexity and enlarge the transport phase diagram.

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Authors and Affiliations

  1. IMEP-LAHC, Univ. Grenoble Alpes, F-38000, Grenoble, France

    A. Cresti

  2. IMEP-LAHC, CNRS, F-38000, Grenoble, France

    A. Cresti

  3. Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716, USA

    B. K. Nikolić

  4. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193, Barcelona, Spain

    J. H. García & S. Roche

  5. ICREA - Institucio Catalana de Recerca i Estudis Avançats, 08010, Barcelona, Spain

    S. Roche

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Cresti, A., Nikolić, B.K., García, J.H. et al. Charge, spin and valley Hall effects in disordered graphene. Riv. Nuovo Cim. 39, 587–667 (2016). https://doi.org/10.1393/ncr/i2016-10130-6

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