Summary
Two-dimensional elemental topological insulators including silicene, germanene and stanene are currently the hottest topics in condensed matter physics. We first review the recent progress on electronic and topological properties of their monolayers from a fundamental viewpoint. Next, we describe their experimental realizations by epitaxial growth and their actual physical properties. We start with the description of the topological nature of generic Dirac systems and then apply it to silicene by introducing the spin and valley degrees of freedom. Based on them, we classify all topological insulators in the general honeycomb system. We discuss topological electronics based on honeycomb systems. We introduce the topological Kirchhoff law, which is a conservation law of topological edge states. A field effect topological transistor is proposed based on the topological edge states. We show that the conductance is quantized even in the presence of random distributed impurities. Monolayer topological insulators will be a key for future topological electronics and spin-valleytronics. The outstanding example of the realization of such monolayer Si, Ge and Sn novel artificial allotropes is the canonical 3 × 3 reconstructed epitaxial silicene phase grown in situ under ultra-high vacuum on the silver (111) surface. Its realization in 2012 has preceded the synthesis of germanene, followed by that of stanene, respectively on Au(111) and Bi2Te3 substrates. Further growth of Si and Ge over monolayer epitaxial silicene and germanene leads to layered thin films displaying Dirac fermion characteristics. Amazingly, Si deposition onto Ag(110) templates yields massively parallel, pentasilicene-like nanoribbons, a novel form of one-dimensional silicon. Field Effect Transistors have been already fabricated both with single and multi-layer silicene channels, clearly demonstrating potential applications in electronics of silicene and such related materials, which are directly compatible with the current, ubiquitous, Si-based technology. Finally, enticing prospects are outlined.
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References
Ezawa M., “Antiferromagnetic topological superconductor and electrically controllable Majorana fermions”, Phys. Rev. Lett., 114 (2015) 056403.
Vogt P., De Padova P., Quaresima C., Avila J., Frantzeskakis E., Asensio M. C., Resta A., Ealet B. and Le Lay G., “Silicene: Compelling experimental evidence for graphenelike two-dimensional silicon”, Phys. Rev. Lett., 108 (2012) 155501.
Fleurence A., Friedlein R., Ozaki T., Kawai H., Wang Y. and Yamada-Takamura Y., “Experimental Evidence for Epitaxial Silicene on Diboride Thin Films”, Phys. Rev. Lett., 108 (2012) 245501.
Day C., “Hot physics”, Physics Today, 25 September 2015.
Dávila M. E., Xian L., Cahangirov S., Rubio A. and Le Lay G., “Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene”, New J. Phys., 16 (2014) 095002.
Zhu F.-f., Chen W.-j., Xu Yong, Gao C.-l., Guan D.-d., Liu C.-h., Qian D., Zhang S.-C. and Jia J.-f., “Epitaxial growth of two-dimensional stanene”, Nat. Mater., 14 (2015) 1020.
Cerdá J. I., Sławinska J., Le Lay G., Marele A. C., Gómez-Rodríguez J. M. and Dávila M. E., Nat. Commun., 7 (2016) 13076.
Tao L., Cinquanta E., Chiappe D., Grazianetti C., Fanciulli M., Dubey M., Molle A. and Akinwande D., “Silicene field-effect transistors operating at room temperature”, Nat. Nanotechnol., 10 (2015) 227.
Le Lay G., Salomon E. and Angot T., “Silicene: Silicon Conquers the 2D World”, Europhys. News, 47 (2016) 17.
Molle A., Goldberger J., Houssa M., Xu Y., Zhang S.-C. and Akinwande D., “Buckled two-dimensional Xene sheets”, Nat. Mater., 16 (2017) 163.
Zhang Y., Rubio A. and Le Lay Guy, “Emergent elemental two-dimensional materials beyond graphene”, J. Phys. D: Appl. Phys., 50 (2017) 053004.
Dávila M. E., Lew Yan Voon L. C., Zhao J. and Le Lay G., Elemental Group IV Two-Dimensional Materials beyond Graphene, in 2D Materials, Elsevier, Semiconductors and Semimetals, Vol. 95 (Elsevier, Amsterdam) 2016, pp. 149–188.
Le Lay G., Salomon E. and Angot T., Silicene, Germanene and Stanene, in Two-Dimensional Materials: Properties and Applications, Vol. 95, edited by Low Tony, Avouris Phaedon, Heinz Tony (Elsevier) 2016.
Salomon E., Beato-Medina D., De Padova P., Angot T. and Le Lay G., Silicene, Springer Handbook of Surface Science, edited by Rocca M., Rahman T. and Vattuatone L. (Springer) 2017.
Cahangirov S., Sahin H., Le Lay G. and Rubio A., Introduction to the Physics of Silicene and Other 2D Materials, Lecture Notes in Physics, Vol. 930 (Springer) 2017.
Ezawa M., “Topological insulator and helical zero mode in silicene under inhomogeneous electric field”, New J. Phys., 14 (2012) 033003.
Drummond N. D., Zolyomi V. and Fal’ko V. I., “Electrically tunable band gap in silicene”, Phys. Rev. B, 85 (2012) 075423.
Ezawa M., “Valley-polarized metals and quantum anomalous Hall effect in silicene”, Phys. Rev. Lett., 109 (2012) 055502.
Ezawa M., “Photoinduced topological phase transition and a single Dirac-cone state in silicene”, Phys. Rev. Lett., 110 (2013) 026603.
Ezawa M., “Quantized conductance and field-effect topological quantum transistor in silicene nanoribbons”, Appl. Phys. Lett., 102 (2013) 172103.
Ezawa M., “Monolayer topological insulators: Silicene, Germanene and Stanene”, J. Phys. Soc. Jpn., 84 (2015) 121003.
Ezawa M. and Nagaosa N., “Interference of topologically protected edge states in silicene nanoribbons”, Phys. Rev. B, 88 (2013) 161406(R).
Saito R., Dresselhaus G. and Dresselhaus M. S., Physical Properties of Carbon Nanotubes (Imperial College Press, London) 1998.
Katsnelson M. I., Graphene: Carbon in Two Dimensions (Cambridge University Press, Cambridge) 2012.
Nielsen H. B. and Ninomiya M., “A no-go theorem for regularizing chiral fermions”, Phys. Lett. B, 105 (1981) 219.
Liu C.-C., Jiang H. and Yao Y., “Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin”, Phys. Rev. B, 84 (2011) 195430.
Liu C.-C., Feng W. and Yao Y., “Quantum spin Hall effect in silicene and two-dimensional germanium”, Phys. Rev. Lett., 107 (2011) 076802.
Kane C. L. and Mele E. J., “Quantum spin Hall effect in graphene”, Phys. Rev. Lett., 95 (2005) 226801
Kane C. L. and Mele E. J., “Z2 topological order and the quantum spin Hall effect”, ibid, 95 (2005) 146802.
Xu Y., Yan B., Zhang H.-J., Wang J., Xu G., Tang P., Duan W. and Zhang S.-C., “Large-gap quantum spin Hall insulators in tin films”, Phys. Rev. Lett., 111 (2013) 136804.
Ezawa M., “Spin-valleytronics in silicene: quantum spin Hall-quantum anomalous Hall insulators and single-valley semimetals”, Phys. Rev. B, 87 (2013) 155415.
Li X., Cao T., Niu Q., Shi J. and Feng J., “Coupling the valley degree of freedom to antiferromagnetic order”, Proc. Natl. Acad. Sci. U.S.A., 110 (2013) 3738.
Liang Q.-F., Wu L.-H. and Hu X., “Electrically tunable topological state in (111) perovskite materials with an antiferromagnetic exchange field”, New J. Phys., 15 (2013) 063031.
Thouless D. J., Kohmoto M., Nightingale M. P. and den Nijs M., “Quantized Hall conductance in a two-dimensional periodic potential”, Phys. Rev. Lett., 49 (1982) 405.
Jackiw R. and Rebbi C., “Solitons with fermion number 1/2”, Phys. Rev. D, 13 (1976) 3398.
Datta S., Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge) 1995, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge) 2005.
Muñoz-Rojas F., Jacob D., Fernández-Rossier J. and Palacios J. J., “Coherent transport in graphene nanoconstrictions”, Phys. Rev. B, 74 (2006) 195417.
Zârbo L. P. and Nikolić B. K., “Spatial distribution of local currents of massless Dirac fermions in quantum transport through graphene nanoribbons”, Europhys. Lett., 80 (2007) 47001.
Areshkin D. A. and Nikolić B. K., “I-V curve signatures of nonequilibrium-driven band gap collapse in magnetically ordered zigzag graphene nanoribbon two-terminal devices”, Phys. Rev. B, 79 (2009) 205430.
Li T. C. and Lu S.-P., “Quantum conductance of graphene nanoribbons with edge defects”, Phys. Rev. B, 77 (2008) 085408.
Sancho M. P. L., Sancho J. M. L. and Rubio J., “Highly convergent schemes for the calculation of bulk and surface Green functions”, J. Phys. F: Met. Phys., 15 (1985) 851.
Takeda K. and Shiraishi K., “Theoretical possibility of stage corrugation in Si and Ge analogs of graphite”, Phys. Rev. B, 50 (1994) 14916.
Resta A., Leoni T., Barth C., Ranguis A., Becker C., Bruhn T., Vogt P. and Le Lay G., “Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations”, Sci. Rep., 3 (2013) 2399.
Liu Z.-L., Wang M.-X., Liu C., Jia J.-F., Vogt P., Quaresima C., Ottaviani C., Olivieri B., De Padova P. and Le Lay G., “The fate of the 2√3 × 2√3R(30◦) silicene phase on Ag(111)”, APL Mater., 2 (2014) 092513.
Curcella A., Bernard R., Borensztein Y., Resta A., Lazzeri M. and Prévot G., “Determining the atomic structure of the (4 × 4) silicene layer on Ag(111) by combined grazing-incidence x-ray diffraction measurements and first-principles calculations”, Phys. Rev. B, 94 (2016) 165438.
Vogt P., Capiod P., Berthe M., Resta A., De Padova P., Bruhn T., Le Lay G. and Grandidier B., “Synthesis and electrical conductivity of multilayer silicene”, Appl. Phys. Lett., 104 (2014) 021602.
Chen L., Liu C.-C., Feng B., He X., Cheng P., Ding Z., Meng S., Yao Y. and Wu K., “Evidence for Dirac fermions in a honeycomb lattice based on silicon”, Phys. Rev. Lett., 109 (2012) 056804.
De Padova P., Generosi A., Paci B., Ottaviani C., Quaresima C., Olivieri B., Salomon E., Angot T. and Le Lay Guy, “Multilayer silicene: clear evidence”, 2D Mater., 3 (2016) 031011.
Le Lay G., “Physics and Electronics of the Noble-Metal Elemental-Semiconductor Interface Formation -a Status-Report”, Surf. Sci., 132 (1983) 169.
Mahatha S. K., Moras P., Sheverdyaeva P. M., Flammini R., Horn K. and Carbone C., “Evidence for a diamondlike electronic band structure of Si multilayers on Ag(111)”, Phys. Rev. B, 92 (2015) 245127.
Borensztein Y., Curcella A., Royer S. and Prévot G., “Silicene multilayers on Ag(111) display a cubic diamondlike structure and a √3 × √3 reconstruction induced by surfactant Ag atoms”, Phys. Rev. B, 92 (2015) 155407.
Takahashi T., Nakatani S., Okamoto N. and Kikuta S., “Study on the Si(111)√3 × √3-Ag surface structure by x-ray diffraction”, Jpn. J. Appl. Phys. Part 2, 27 (1988) L753.
Gill T. G., Fleurence A., Warner B., Prüser H., Friedlein R., Sadowski J. T., Hirjibehedin C. F. and Yamada-Takamura Yukiko, “Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB2”, 2D Mater., 4 (2017) 021015.
De Padova P., Ottaviani C., Quaresima C., Olivieri B., Imperatori P., Salomon E., Angot T., Quagliano L., Romano C., Vona A., Muniz-Miranda M., Generosi A., Paci B. and Le Lay G., “24h stability of thick multilayer silicene in air”, 2D Mater., 1 (2014) 021003.
Avila J., De Padova P., Cho S., Colambo I., Lorcy S., Quaresima C., Vogt P., Resta A., Le Lay G. and Asensio M. C., “Presence of gapped silicene-derived band in the prototypical (3 × 3) silicene phase on silver (111) surfaces”, J. Phys.: Condens. Matter, 25 (2013) 262001.
Guo Z.-X., Furuya S., Iwata J.-I. and Oshiyama A., “Absence and presence of Dirac electrons in silicene on substrates”, Phys. Rev. B, 87 (2013) 235435.
Gori P., Pulci O., Ronci F., Colonna S. and Bechstedt F. F., “Origin of Diraccone-like feaures in silicon structures on Ag(111) and Ag(110)”, J. Appl. Phys., 114 (2013) 113710.
Huang S., Kang W. and Yang L., “Electronic structure and quasiparticle bandgap of silicene structures”, Appl. Phys. Lett., 102 (2013) 133106.
Cahangirov S., Audiffred M., Tang P., Iacomino A., Duan W., Merino G. and Rubio A., “Electronic structure of silicene on Ag(111): Strong hybridization effects”, Phys. Rev. B, 88 (2013) 035432.
Mahatha S. K., Moras P., Bellini V., Sheverdyaeva P. M., Struzzi C., Petaccia L. and Carbone C., “Silicene on Ag(111): A honeycomb lattice without Dirac bands”, Phys. Rev. B, 89 (2014) 201416(R).
Sheverdyaeva P. M., Mahatha S. K., Moras P., Petaccia L., Fratesi G., Onida G. and Carbone C., “Electronic States of Silicene Allotropes on Ag(111)”, ACS Nano, 11 (2017) 975.
Fukaya Y., Mochizuki I., Maekawa M., Wada K., Hyodo T., Matsuda Y. and Kawasuso A., “Structure of silicene on a Ag(111) surface studied by reflection high-energy positron diffraction”, Phys. Rev. B, 88 (2013) 205413.
Tsoutsou D., Xenogiannopoulou E., Golias E., Tsipas P. and Dimoulas A., “Evidence for hybrid surface metallic band in (4 × 4) silicene on Ag(111)”, Appl. Phys. Lett., 103 (2013) 231604.
Feng Y. et al., “Direct evidence of interaction-induced Dirac cones in a monolayer silicene/Ag(111) system”, Proc. Natl. Acad. Sci. U.S.A., 113 (2016) 14656.
Chen L., Liu C.-C., Feng B., He X., Cheng P., Ding Z., Meng S., Yao Y. and Wu K., “Evidence of Dirac Fermions in a Honeycomb Lattice Based on Silicon”, Phys. Rev. Lett., 109 (2012) 056804.
Hoffmann R., “Small but Strong Lessons from Chemistry for Nanoscience”, Angew. Chem. Int. Ed., 52 (2013) 93.
Kamal C., Chakrabarti A., Banerjee A. and Deb S. K., “Silicene beyond mono-kayers-different stacking configurationsand their properties”, J. Phys.: Condens. Matter., 25 (2013) 085508.
Cahangirov S., Özçelik V. O., Rubio A. and Ciraci S., “Silicite: The layered allotrope of silicon”, Phys. Rev. B, 90 (2014) 085426.
De Padova P. et al., “Evidence of Dirac fermions in multilayer silicene”, Appl. Phys. Lett., 102 (2013) 163106.
De Padova P., Avila J., Resta A., Razado-Colambo I., Quaresima C., Ottaviani C., Olivieri B., Bruhn T., Vogt P., Asensio M. C. and Le Lay C, “The quasiparticles band dispersion in epitaxial multilayer silicene”, J. Phys.: Condens. Matter, 25 (2013) 382202.
Salomon E., Ajjouri R. E., Le Lay G. and Angot T., “Growth and structural properties of silicene at multilayer coverage”, J. Phys.: Condens. Matter, 25 (2014) 185003.
Crain J. N., Altmann K. N., Bromberger C. and Himpsel F. J., “Fermi surfaces of surface states on Si(111)-Ag, Au”, Phys. Rev. B, 66 (2002) 205302.
Shirai T., Shirasawa T., Hirahara T., Fukui N., Takahashi T. and Hasegawa S., “Structure determination of multilayer silicene grown on Ag(111) films by electron diffraction: Evidence for Ag segregation at the surface”, Phys. Rev. B, 89 (2014) 241403(R).
Yamagami T., Sone J., Yamagami T., Nakatsuji K. and Hirayama H., “Surfactant role of Ag atoms in the growth of Si layers on Si(111) √3 × √3-Ag substrates”, Appl. Phys. Lett., 105 (2014) 151603.
Du Y., Zhuang J., Wang J., Li Z., Liu H., Zhao J., Xu X., Feng H., Chen L., Wu K., Wang X. and Dou S. X., “Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation”, Sci. Adv., 2 (2016) e1600067.
Li Z., Zhuang J., Chen L., Ni Z., Liu C., Wang L., Xu X., Wang J., Pi X., Wang X., Du Y., Wu K. and Dou S. X., “Observation of van Hove Singularities in Twisted Silicene Multilayers”, ACS Cent. Sci., 2 (2016) 517.
Yan J.-A., Stein R., Schaefer D. M., Wang X.-Q. and Chou M. Y., “Electron-phonon coupling in two-dimensional silicene and germanene”, Phys. Rev. B, 88 (2013) 121403(R).
Cahangirov S., Topsakal M., Aktürk E., Şahin H. and Ciraci S., “Two- and One Dimensional honeycomb structure of Silicon and Germanium”, Phys. Rev. Lett., 102 (2009) 236804.
Li X., Mullen J. T., Jin Z., Borysenko K. M., Buongiorno Nardelli M. and Kim K. W., “Intrinsic electrical transport properties of monolayer silicene and MoS2 from first principles”, Phys. Rev. B, 87 (2013) 115418.
Solonenko D., Gordan O. D., Le Lay G., Şahin H., Cahangirov S., Zahn D. R. T. and Vogt Patrick, “2D vibrational properties of epitaxial silicene on Ag(111)”, 2D Mater., 4 (2017) 015008.
Satta M., Colonna S., Flammini R., Cricenti A. and Ronci F., “Silicon Reactivity at the Ag(111) Surface”, Phys. Rev. Lett., 115 (2015) 026102.
Cinquanta E., Scalise E., Chiappe D., Grazianetti C., van den Broek B., Houssa M., Fanciulli M. and Molle A., “Getting through the Nature of Silicene: An sp2-sp3 Two-Dimensional Silicon Nanosheet”, J. Phys. Chem. C, 117 (2013) 16719.
Zhuang J., Xu X., Du Y., Wu K., Chen L., Hao W., Wang J., Yeoh W. K., Wang X. and Dou S. X., “Investigation of electron-phonon coupling in epitaxial silicene by in situ Raman spectroscopy”, Phys. Rev. B, 91 (2015) 161409(R).
Aizawa T., Suehara S. and Otani S., “Phonon dispersion of silicene on ZrB2(0001)”, J. Phys.: Condens. Matter, 27 (2015) 305002.
Acun A., Poelsema B., Zandvliet H. J. W. and van Gastel R., “The instability of silicene on Ag(111)”, Appl. Phys. Lett., 103 (2013) 263119.
Solonenko D., Gordan O. D., Le Lay G., Zahn D. R. T. and Vogt P., “Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)”, Beilstein J. Nanotechnol., 8 (2017) 1357.
Li L., Lu S.-z., Pan J., Qin Z., Wang Y.-q., Wang Y., Cao G.-y., Du S. and Gao H.-J., “Buckled germanene formation on Pt(111)”, Adv. Mater., 26 (2014) 4820.
Švec M., Hapala P., Ondrácček M., Merino P., Blanco-Rey M., Mutombo P., Vondracek M., Polyak Y., Cháb V., Martín Gago J. A. and Jelínek P., “Silicene versus two-dimensional ordered silicide: Atomic and electronic structure of Si(√19 × √19)R23.4◦/Pt(111)”, Phys. Rev. B, 89 (2014) 201412(R).
Ho C.-S., Banerjee S., Batzill M., Beck D. E. and Koel B. E., “Formation and structure of a (√19 × √19)R23.4◦-Ge/Pt(111) surface alloy”, Surface Sci., 603 (2009) 1161.
Li F., Wei W., Yu L., Huang B. and Dai Y., “Interface effects between germanene and Au(111) from first principles”, J. Phys. D: Appl. Phys., 50 (2017) 115301.
Dávila M. E. and Le Lay G., “Few layer epitaxial germanene: a novel two-dimensional Dirac material”, Sci. Rep., 6 (2016) 20714.
Schröter N. B. M., Watson M. D., Duffy L. B., Hoesch M., Chen Y., Hesjedal T. and Kim T. K., “Emergence of Dirac-like bands in the monolayer limit of epitaxial Ge films on Au(111)”, 2D Mater., 4 (2017) 031005.
Wang Y., Li J., Xiong J., Pan Y., Ye M., Guo Y., Zhang H., Quhe R. and Lu J., “Does the Dirac cone of germanene exist on metal substrates?”, Phys. Chem. Chem. Phys., 18 (2016) 19451.
Cantero E. D., Solis L. M., Tong Y., Fuhr J. D., Martiarene M. L., Grizzi O. and Sánchez E. A., “Growth of germanium on Au(111): formation of germanene or intemixing of Au and Ge atoms?”, Phys. Chem. Chem. Phys., 19 (2017) 18580.
Derivaz M., Dentel D., Stephan R., Hanf M.-C., Mehdaoui A., Sonnet P. and Pirri C., “Continuous Germanene Layer on Al(111)”, Nano Lett., 15 (2015) 2510.
Stephan R., Hanf M. C., Derivaz M., Dentel D., Asensio M. C., Avila J., Mehdaoui A., Sonnet P. and Pirri C., “Germanene on Al(111): Interface Electronic States and Charge Transfer”, J. Phys. Chem. C, 120 (2016) 1580.
Zhang L., Bampoulis P., van Houselt A. and Zandvliet H. J. W., “Two-dimensional Dirac signature of germanene”, Appl. Phys. Lett., 107 (2015) 111605.
Qin Z., Pan J., Lu S., Shao Y., Wang Y., Du S., Gao H.-J. and Cao G., “Direct Evidence of Dirac Signature in Bilayer Germanene Islands on Cu(111)”, Adv. Mater., 29 (2017) 1606046.
d’Acapito F., Torrengo S., Xenogiannopoulou E., Tsipas P., Marquez Velasco J., Tsoutsouand D. and Dimoulas A., “Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(111)”, J. Phys.: Condens. Matter, 28 (2016) 045002.
Chiappe D., Scalise E., Cinquanta E., Grazianetti C, van den Broek B., Fanciulli M., Houssa M. and Molle A., “Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface”, Adv. Mater., 26 (2014) 2096.
Zhang L., Bampoulis P., Rudenko A. N., Yao Q., van Houselt A., Poelsema B., Katsnelson M. I. and Zandvliet H. J. W., “Structural and Electronic Properties of Germanene on MoS2”, Phys. Rev. Lett., 116 (2016) 256804.
Persichetti L., Jardali F., Vach H., Sgarlata A., Berbezier I., De Crescenzi M. and Balzarotti A., “van der Waals Heteroepitaxy of Germanene Islands on Graphite”, J. Phys. Chem. Lett., 7 (2016) 3246.
Gou J., Zhong Q., Sheng S., Li W., Cheng P., Li H., Chen L. and Wu K., “Strained monolayer germanene with 1 × 1 lattice on Sb(111)”, 2D Mater., 3 (2016) 045005.
Fiori G., Bonaccorso F., Iannaccone G., Palacios T., Neumaier D., Seabaugh A., Banerjee S. K. and Colombo L., “Electronics based on two-dimensional materials”, Nat. Nanotech., 9 (2014) 768.
Novoselov K., Geim A. K., Morozov S. V., Jiang D., Zhang Y., Dubonos S. V., Grigorieva I. V. and Firsov A. A., “Electric field effect in atomically thin carbon films”, Science, 306 (2004) 666.
Houssa M., Dimoulas A. and Molle A. (Editors), 2D Materials for Nanoelectronics ((CRC Press, Boca Raton (Taylor & Francis Group)) 2016.
Shahrjerdi D. and Bedell S. W., “Extremely Flexible Nanoscale Ultrathin Body Silicon Integrated Circuits on Plastic”, Nano Lett., 13 (2013) 315.
Zhuang J., Xu X., Peleckis G., Hao W., Dou S. X. and Du Y., “Silicene: A Promising Anode for Lithium-Ion Batteries”, Adv. Mater., 29 (2017) 1606716.
Scalise E., Cinquanta E., Houssa M., van den Broek B., Chiappe D., Grazianetti C., Pourtois G., Ealet B., Molle A., Fanciulli M., Afanas’ev V. V. and Stesmans A., “Vibrational properties of epitaxial silicene layers on (111) Ag”, Appl. Surf. Sci., 291 (2014) 113.
Cinquanta E., Fratesi G., Dal Conte S., Grazianetti C., Scotognella F., Stagira S., Vozzi C., Onida G. and Molle A., “Optical response and ultrafast carrier dynamics of the silicene-silver interface”, Phys. Rev. B, 92 (2015) 165427.
Molle A., Lamperti A., Rotta D., Fanciulli M., Cinquanta E. and Grazianetti C., “Electron Confinement at the Si/MoS2 Heterosheet Interface”, Adv. Mater. Interfaces, 3 (2016) 1500619.
Zhuang J., Gao N., Li Z., Xu X., Wang J., Zhao J., Dou S. X. and Du Y., “Cooperative Electron-Phonon Coupling and Buckled Structure in Germanene on Au(111)”, ACS Nano, 11 (2017) 3553.
Sadeddine S., Enriquez H., Bendounan A., Kumar Das P., Vobornik I., Kara A., Mayne A. J., Sirotti F., Dujardin G. and Oughaddou H., “Compelling experimental evidence of a Dirac cone in the electronic structure of a 2D Silicon layer”, Sci. Rep., 7 (2017) 44400.
Zhang J. L., Zhao S., Han C., Wang Z., Zhong S., Sun S., Guo R., Zhou X., Gu G. D., Yuan K. D., Li Z. and Chen W., “Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus”, Nano Lett., 16 (2016) 4903.
Mannix A. J., Zhou X.-F., Kiraly B., Wood J. D., Alducin D., Myers B. D., Liu X., Fisher B. L., Santiago U., Guest J. R., Yacaman M. J., Ponce A., Oganov A. R., Hersam M. C. and Guisinger N. P., “Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs”, Science, 350 (2015) 1513.
Feng B., Zhang J., Zhong Q., Li W., Li S., Li H., Cheng P., Meng S., Chen L. and Wu K., “Experimental realization of two-dimensional boron sheets”, Nat. Chem., 8 (2016) 563.
Scalise E., Houssa, Cinquanta E., Grazianetti C., van den Broek B., Pourtois G., Stesmans A., Fanciulli M. and Molle A., “Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S, Se, Te) chalchogenide templates”, 2D Mater., 1 (2014) 011010.
Chiappe D., Grazianetti C., Tallarida G., Fanciulli M. and Molle A., “Local electronic properties of corrugated silicene phases”, Adv. Mater., 24 (2012) 5088.
Feng B., Ding Z., Meng S., Yao Y., He X., Cheng P., Chen L. and Wu K., “Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)”, Nano Lett., 12 (2012) 3507.
Grazianetti C., Cinquanta E., Tao L., De Padova P., Quaresima C., Ottaviani C., Akinwande D. and Molle A., “Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime”, ACS Nano, 11 (2017) 3376.
Bianco E., Butler S., Jiang S., Restrepo O. D., Windl W. and Goldberger J., “Stability and Exfoliation of Germanane: A Germanium Graphane Analogue”, ACS Nano, 7 (2013) 4414.
Houssa M., Scalise E., Sankaran K., Pourtois G., Afanas’ev V. V. and Stesmans A., “Electronic properties of hydrogenated silicene and germanene”, Appl. Phys. Lett., 98 (2011) 223107.
Madhushankar B. N., Kaverzin A., Giousis T., Potsi G., Gournis D., Rudolf P., Blake G. R., van der Wal C. H. and van Wees B. J., “Electronic properties of germanane field-effect transistors”, 2D Mater., 4 (2017) 021009.
Young J. R., Chitara B., Cultrara N. D., Arguilla M. Q., Jiang S., Fan F., Johnston-Halperin E. and Goldberger J. E., “Water activated doping and transport in multilayered germanane crystals”, J. Phys.: Condens. Matter, 28 (2016) 034001.
Nakano H., Mitsuoka T., Harada M., Horibuchi K., Nozaki H., Takahashi N., Nonaka T., Seno Y. and Nakamura H., “Soft Synthesis of Single-Crystal Silicon Monolayer Sheets”, Angew. Chem., Int. Ed., 45 (2006) 6303.
Noguchi E., Sugawara K., Yaokawa R., Hitosugi T., Nakano H. and Takahashi T., “Direct Observation of Dirac Cone in Multilayer Silicene Intercalation Compound CaSi2”, Adv. Mater., 27 (2015) 856.
Beato Medina D., Salomon E., Le Lay G. and Angot T., J. Electron Spectrosc. Relat. Phenom., 219 (2017) 57.
Solonenko D., Dzhagan V., Cahangirov S., Bacaksiz C., Sahin H., Zahn D. R. T. and Vogt P., “Hydrogen-induced sp2-sp3 rehybridization in epitaxial silicene”, Phys. Rev. B, 96 (2017) 235423.
Qiu J., Fu H., Xu Y., Oreshkin A. I., Shao T., Li H., Meng S., Chen L. and Wu K., “Ordered and Reversible Hydrogenation of Silicene”, Phys. Rev. Lett., 114 (2015) 126101.
Tuilier M. H., Wetzel P., Pirri C., Bolmont D. and Gewinner G., “Interfacial structureof two-dimensional epitaxial Er silicide on Si(111)”, Phys. Rev. B, 50 (1994) 2333.
Angot T., Koulmann J. J., Bolmont D. and Gewinner G., “Frequency shift of the Si-H vibrational modes on erbium silicide measured by HREELS”, Surf. Sci., 368 (1996) 190.
Wang W., Olovsson W. and Uhrberg R. I. G., “Band structure of hydrogenated silicene on Ag(111): Evidence for half-silicane”, Phys. Rev. B, 93 (2016) 081406(R).
Podsiadły-Paszkowska A. and Krawiec M., “Tuning the Electronic Structure of Hydrogen-Decorated Silicene”, Condens. Matter, 2 (2017) 1.
Zhang S., Zhou J., Wang G., Chen X., Kawazoe Y. and Jenac P., “Penta-graphene: A new carbon allotrope”, Proc. Natl. Acad. Sci. U.S.A., 112 (2015) 2372.
Ding Y. and Wang Y., “Hydrogen-induced stabilization and tunable electronic structures of penta-silicene: a computational study”, J. Mater. Chem. C, 3 (2015) 11341.
Aierken Y., Leenaerts O. and Peeters F. M., “A first-principles study of stable few-layer penta-silicene”, Phys. Chem. Chem. Phys., 18 (2016) 18486.
Leandri C., Le Lay G., Aufray B., Girardeaux C., Avila J., Dávila M. E., Asensio M. C., Ottaviani C. and Cricenti A., Surf. Sci., 574 (2005) L9.
Sahaf H., Masson L., Léandri C., Aufray B., Le Lay G. and Ronci F., “Formation of a one-dimensional grating at the molecular scale by self-assembly of straight silicon nanowires”, Appl. Phys. Lett., 90 (2007) 263110.
Prévot G., Hogan C., Léoni T., Bernard R., Moyen E. and Masson L., “Si nanoribbons on Ag(110) studied by grazing incidence x-ray diffraction, scanning tunneling microscopy, and density-functional theory: evidence of a pentamer chain structure”, Phys. Rev. Lett., 117 (2016) 276102.
De Padova P., Perfetti P., Olivieri B., Quaresima C., Ottaviani C. and Le Lay G., “1D graphene-like silicon systems: silicenenano-ribbons”, J. Phys.: Condens. Matter, 24 (2012) 223001.
Yuhara J., Fujii Y., Nishino K., Isobe N., Nakatake M., Xian L. D., Rubio A. and Le Lay G., “Large area planar stanene epitaxially grown on Ag(111)”, 2D Mater., 5 (2018) 025002.0.
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Ezawa, M., Salomon, E., De Padova, P. et al. Fundamentals and functionalities of silicene, germanene, and stanene. Riv. Nuovo Cim. 41, 175–224 (2018). https://doi.org/10.1393/ncr/i2018-10145-y
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DOI: https://doi.org/10.1393/ncr/i2018-10145-y