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Photoelectric Parameters of Photodetectors Based on Thin Microcrystalline Films of CH3NH3PbI3 Perovskite

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Abstract

Photoelectric characteristics of photodetectors of the type of a photoresistor based on microcrystalline films of the organometallic perovskite CH3NH3PbI3 with gold and aluminum contacts have been studied. The maximum photosensitivity of the photodetectors was 30 A/W. The buildup and decay times of the photoconductivity were in the range from 2.6 to 25.5 μs.

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Funding

This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00417 mol_a.

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Authors and Affiliations

  1. Prokhorov General Physics Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    D. V. Amasev

  2. Moscow State University, 119991, Moscow, Russia

    K. A. Savin

  3. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    K. A. Savin & S. N. Nikolaev

Authors
  1. D. V. Amasev
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  2. K. A. Savin
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  3. S. N. Nikolaev
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Correspondence to K. A. Savin.

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The authors declare that they have no conflict of interest.

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Translated by M. Tagirdzhanov

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Amasev, D.V., Savin, K.A. & Nikolaev, S.N. Photoelectric Parameters of Photodetectors Based on Thin Microcrystalline Films of CH3NH3PbI3 Perovskite. Tech. Phys. Lett. 46, 653–656 (2020). https://doi.org/10.1134/S1063785020070020

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  • DOI: https://doi.org/10.1134/S1063785020070020

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