Abstract
The paper presents theoretical model of a straintronics magnetoelectric random-access memory (MeRAM) storage cell with configurational anisotropy. The MeRAM cell consists of ferromagnetic layers with different orientations of the quasi-uniform magnetization, which is divided into identical magnetic tunnel junction’s ferromagnet|insulator|ferromagnet, in the form of a sandwich of planar layers. The modified theory for magnetic tunnel junction is used to calculate the spin-dependent current and tunnel magnetoresistance like functions of orientations magnetizations of layers.
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Funding
The computer simulation was partially supported by the Russian Foundation for Basic Research (project no. 18-02-00204). The elaboration of the theoretical model was partially funded by the Program of Competitive Growth of Kazan Federal University.
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Useinov, N.K., Chuklanov, A.P., Bizyaev, D.A. et al. Spin-Dependent Electron Transport in MeRAM. Phys. Solid State 62, 1706–1712 (2020). https://doi.org/10.1134/S1063783420090310
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DOI: https://doi.org/10.1134/S1063783420090310