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Selenization of KF Premixed CuInGa Precursor and Its Impact on Solar Cell Performance

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Abstract

K-doped Cu(In,Ga)Se2 absorber thin films were prepared by a two-step process (sputtering/selenization) using a metal precursor of a KF-premixed In/CuGa/Mo/glass structure and Se vapor. KF was deposited on top of In, between In and CuGa, and below CuGa by thermal evaporation. The properties were compared with those of a precursor without KF inserted. As an effect of KF insertion, a large electrical change was observed, i.e., the disappearance of deep-level defects, and the grain size and Ga composition distribution of the absorber layer thin film were changed slightly. Nevertheless, there was no benefit in terms of the solar cell performance compared to a precursor without KF inserted. The K inserted in the precursor occupied a position competitively with Na diffused from the substrate, resulting in an undesirable carrier density profile in the surface region of the absorber layer thin film.

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Acknowledgements

This work was supported by “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea. (No. 20204010600100). This work was supported by the 2018 Yeungnam University Research Grant (218A380052, 218A061012).

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  1. School of Chemical Engineering, Yeungnam University, Gyeongsan, Korea

    Ji-A Oh, Yu-Jin Song, Sung-Wook Cho, Gyeong-A Lee, A-Hyun Kim & Chan-Wook Jeon

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  1. Ji-A Oh
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  2. Yu-Jin Song
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Correspondence to Chan-Wook Jeon.

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Oh, JA., Song, YJ., Cho, SW. et al. Selenization of KF Premixed CuInGa Precursor and Its Impact on Solar Cell Performance. Electron. Mater. Lett. 16, 548–555 (2020). https://doi.org/10.1007/s13391-020-00244-x

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  • DOI: https://doi.org/10.1007/s13391-020-00244-x

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